Growth conditions influence on thermally stimulated luminescence of sapphire single crystals

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2002
• Main Authors: Blonskyy, I.V., Vakhnin, A.Yu., Danko, A.Ya., Kadashchuk, A.K., Kadan, V.N., Sidelnikova, N.S., Puzikov, V.M., Skryshevskii, Yu.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121349
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Growth conditions influence on thermally stimulated luminescence of sapphire single crystals / I.V. Blonskyy, A.Yu. Vakhnin, A.Ya. Danko, A.K. Kadashchuk, V.N. Kadan, N.S. Sidelnikova, V.M. Puzikov, Yu.A. Skryshevskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 420-424. — Бібліогр.: 11 назв. — англ.

The results of investigation of thermally stimulated and photoluminescence as well as absorption spectra of a-sapphire grown by a technique of horizontally directed crystallization in a protective gas medium of varying composition and pressure are presented. This technique has an advantage of minimi...