Modified optical OR and AND gates

This paper deals with optical OR and AND gate, using unijunction transistor (UJT), light emitting diode (LED), and photo-resistor (LDR). Effort is made to extend the development of the gates using UJT, LDR, and LED to work at 1.8 Vdc instead of 3 Vdc. The power dissipation is approximately 2 mW. The...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2002
ISSN:1560-8034
1. Verfasser: Srinivasulu, Avireni
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121352
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Modified optical OR and AND gates / Avireni Srinivasulu // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 428-430. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862727842150744064
author Srinivasulu, Avireni
author_facet Srinivasulu, Avireni
citation_txt Modified optical OR and AND gates / Avireni Srinivasulu // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 428-430. — Бібліогр.: 8 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description This paper deals with optical OR and AND gate, using unijunction transistor (UJT), light emitting diode (LED), and photo-resistor (LDR). Effort is made to extend the development of the gates using UJT, LDR, and LED to work at 1.8 Vdc instead of 3 Vdc. The power dissipation is approximately 2 mW. These optical gates find application in the field of instrumentation, optical logic isolators, and fiber optics systems where intrinsic safety is of prime importance rather than speed of operation.
first_indexed 2025-12-07T19:05:34Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-121352
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T19:05:34Z
publishDate 2002
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Srinivasulu, Avireni
2017-06-14T07:47:47Z
2017-06-14T07:47:47Z
2002
Modified optical OR and AND gates / Avireni Srinivasulu // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 428-430. — Бібліогр.: 8 назв. — англ.
1560-8034
PACS: 42.65.Pc
https://nasplib.isofts.kiev.ua/handle/123456789/121352
This paper deals with optical OR and AND gate, using unijunction transistor (UJT), light emitting diode (LED), and photo-resistor (LDR). Effort is made to extend the development of the gates using UJT, LDR, and LED to work at 1.8 Vdc instead of 3 Vdc. The power dissipation is approximately 2 mW. These optical gates find application in the field of instrumentation, optical logic isolators, and fiber optics systems where intrinsic safety is of prime importance rather than speed of operation.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Modified optical OR and AND gates
Article
published earlier
spellingShingle Modified optical OR and AND gates
Srinivasulu, Avireni
title Modified optical OR and AND gates
title_full Modified optical OR and AND gates
title_fullStr Modified optical OR and AND gates
title_full_unstemmed Modified optical OR and AND gates
title_short Modified optical OR and AND gates
title_sort modified optical or and and gates
url https://nasplib.isofts.kiev.ua/handle/123456789/121352
work_keys_str_mv AT srinivasuluavireni modifiedopticalorandandgates