Modified optical OR and AND gates
This paper deals with optical OR and AND gate, using unijunction transistor (UJT), light emitting diode (LED), and photo-resistor (LDR). Effort is made to extend the development of the gates using UJT, LDR, and LED to work at 1.8 Vdc instead of 3 Vdc. The power dissipation is approximately 2 mW. The...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2002 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121352 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Modified optical OR and AND gates / Avireni Srinivasulu // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 428-430. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862727842150744064 |
|---|---|
| author | Srinivasulu, Avireni |
| author_facet | Srinivasulu, Avireni |
| citation_txt | Modified optical OR and AND gates / Avireni Srinivasulu // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 428-430. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | This paper deals with optical OR and AND gate, using unijunction transistor (UJT), light emitting diode (LED), and photo-resistor (LDR). Effort is made to extend the development of the gates using UJT, LDR, and LED to work at 1.8 Vdc instead of 3 Vdc. The power dissipation is approximately 2 mW. These optical gates find application in the field of instrumentation, optical logic isolators, and fiber optics systems where intrinsic safety is of prime importance rather than speed of operation.
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| first_indexed | 2025-12-07T19:05:34Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121352 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:05:34Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Srinivasulu, Avireni 2017-06-14T07:47:47Z 2017-06-14T07:47:47Z 2002 Modified optical OR and AND gates / Avireni Srinivasulu // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 428-430. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 42.65.Pc https://nasplib.isofts.kiev.ua/handle/123456789/121352 This paper deals with optical OR and AND gate, using unijunction transistor (UJT), light emitting diode (LED), and photo-resistor (LDR). Effort is made to extend the development of the gates using UJT, LDR, and LED to work at 1.8 Vdc instead of 3 Vdc. The power dissipation is approximately 2 mW. These optical gates find application in the field of instrumentation, optical logic isolators, and fiber optics systems where intrinsic safety is of prime importance rather than speed of operation. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Modified optical OR and AND gates Article published earlier |
| spellingShingle | Modified optical OR and AND gates Srinivasulu, Avireni |
| title | Modified optical OR and AND gates |
| title_full | Modified optical OR and AND gates |
| title_fullStr | Modified optical OR and AND gates |
| title_full_unstemmed | Modified optical OR and AND gates |
| title_short | Modified optical OR and AND gates |
| title_sort | modified optical or and and gates |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121352 |
| work_keys_str_mv | AT srinivasuluavireni modifiedopticalorandandgates |