A universal automated complex for control and diagnostics of semiconductor devices and structures
We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2002 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121359 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | A universal automated complex for control and diagnostics of semiconductor devices and structures / R.V. Konakova, O.E. Rengevych, A.M. Kurakin, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 449-452. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862618855632797696 |
|---|---|
| author | Konakova, R.V. Rengevych, O.E. Kurakin, A.M. Kudryk, Ya.Ya. |
| author_facet | Konakova, R.V. Rengevych, O.E. Kurakin, A.M. Kudryk, Ya.Ya. |
| citation_txt | A universal automated complex for control and diagnostics of semiconductor devices and structures / R.V. Konakova, O.E. Rengevych, A.M. Kurakin, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 449-452. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is the possibility for simulation of interrelation between parameters of the objects studied. The complex has been tested when studying the effect of g- and microwave radiations on parameters of gallium arsenide SB-FETs, GaN-based HEMTs and silicon carbide SBDs.
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| first_indexed | 2025-12-07T13:15:44Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121359 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:15:44Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Konakova, R.V. Rengevych, O.E. Kurakin, A.M. Kudryk, Ya.Ya. 2017-06-14T07:51:41Z 2017-06-14T07:51:41Z 2002 A universal automated complex for control and diagnostics of semiconductor devices and structures / R.V. Konakova, O.E. Rengevych, A.M. Kurakin, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 449-452. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 85.30 https://nasplib.isofts.kiev.ua/handle/123456789/121359 We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is the possibility for simulation of interrelation between parameters of the objects studied. The complex has been tested when studying the effect of g- and microwave radiations on parameters of gallium arsenide SB-FETs, GaN-based HEMTs and silicon carbide SBDs. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics A universal automated complex for control and diagnostics of semiconductor devices and structures Article published earlier |
| spellingShingle | A universal automated complex for control and diagnostics of semiconductor devices and structures Konakova, R.V. Rengevych, O.E. Kurakin, A.M. Kudryk, Ya.Ya. |
| title | A universal automated complex for control and diagnostics of semiconductor devices and structures |
| title_full | A universal automated complex for control and diagnostics of semiconductor devices and structures |
| title_fullStr | A universal automated complex for control and diagnostics of semiconductor devices and structures |
| title_full_unstemmed | A universal automated complex for control and diagnostics of semiconductor devices and structures |
| title_short | A universal automated complex for control and diagnostics of semiconductor devices and structures |
| title_sort | universal automated complex for control and diagnostics of semiconductor devices and structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121359 |
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