A universal automated complex for control and diagnostics of semiconductor devices and structures
We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2002 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121359 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | A universal automated complex for control and diagnostics of semiconductor devices and structures / R.V. Konakova, O.E. Rengevych, A.M. Kurakin, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 449-452. — Бібліогр.: 14 назв. — англ. |
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Konakova, R.V. Rengevych, O.E. Kurakin, A.M. Kudryk, Ya.Ya. 2017-06-14T07:51:41Z 2017-06-14T07:51:41Z 2002 A universal automated complex for control and diagnostics of semiconductor devices and structures / R.V. Konakova, O.E. Rengevych, A.M. Kurakin, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 449-452. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 85.30 https://nasplib.isofts.kiev.ua/handle/123456789/121359 We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is the possibility for simulation of interrelation between parameters of the objects studied. The complex has been tested when studying the effect of g- and microwave radiations on parameters of gallium arsenide SB-FETs, GaN-based HEMTs and silicon carbide SBDs. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics A universal automated complex for control and diagnostics of semiconductor devices and structures Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
A universal automated complex for control and diagnostics of semiconductor devices and structures |
| spellingShingle |
A universal automated complex for control and diagnostics of semiconductor devices and structures Konakova, R.V. Rengevych, O.E. Kurakin, A.M. Kudryk, Ya.Ya. |
| title_short |
A universal automated complex for control and diagnostics of semiconductor devices and structures |
| title_full |
A universal automated complex for control and diagnostics of semiconductor devices and structures |
| title_fullStr |
A universal automated complex for control and diagnostics of semiconductor devices and structures |
| title_full_unstemmed |
A universal automated complex for control and diagnostics of semiconductor devices and structures |
| title_sort |
universal automated complex for control and diagnostics of semiconductor devices and structures |
| author |
Konakova, R.V. Rengevych, O.E. Kurakin, A.M. Kudryk, Ya.Ya. |
| author_facet |
Konakova, R.V. Rengevych, O.E. Kurakin, A.M. Kudryk, Ya.Ya. |
| publishDate |
2002 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is the possibility for simulation of interrelation between parameters of the objects studied. The complex has been tested when studying the effect of g- and microwave radiations on parameters of gallium arsenide SB-FETs, GaN-based HEMTs and silicon carbide SBDs.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121359 |
| citation_txt |
A universal automated complex for control and diagnostics of semiconductor devices and structures / R.V. Konakova, O.E. Rengevych, A.M. Kurakin, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 449-452. — Бібліогр.: 14 назв. — англ. |
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