Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing
Using X-ray phase analysis, Auger electron spectroscopy and atomic force microscopy, we investigated structural-phase transformations in the Ni/n-21R-SiC system induced by rapid thermal annealing in a vacuum (pressure of 10-² Pa) in the 450-1100 °С temperature range. It was found that modification o...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2002 |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121364 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing / V.L. Litvinov, K.D. Demakov, O.A. Agueev, A.M. Svetlichny, R.V. Konakova, P.M. Lytvyn, O.S. Lytvyn, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 457-464. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862736374319284224 |
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| author | Litvinov, V.L. Demakov, K.D. Agueev, O.A. Svetlichny, A.M. Konakova, R.V. Lytvyn, P.M. Lytvyn, O.S. Milenin, V.V. |
| author_facet | Litvinov, V.L. Demakov, K.D. Agueev, O.A. Svetlichny, A.M. Konakova, R.V. Lytvyn, P.M. Lytvyn, O.S. Milenin, V.V. |
| citation_txt | Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing / V.L. Litvinov, K.D. Demakov, O.A. Agueev, A.M. Svetlichny, R.V. Konakova, P.M. Lytvyn, O.S. Lytvyn, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 457-464. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Using X-ray phase analysis, Auger electron spectroscopy and atomic force microscopy, we investigated structural-phase transformations in the Ni/n-21R-SiC system induced by rapid thermal annealing in a vacuum (pressure of 10-² Pa) in the 450-1100 °С temperature range. It was found that modification of contact I-V curves from barrier-type to ohmic is due to appearance of local contact areas with different barrier heights (among them areas with ohmic conduction). Generation of the above nonuniformities results from intense heterodiffusion of the system components, as well as formation and recrystallization of various nickel silicide phases (differing in stoichiometry) and degradation of planar uniformity of both interface and Ni film.
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| first_indexed | 2025-12-07T19:53:45Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121364 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:53:45Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Litvinov, V.L. Demakov, K.D. Agueev, O.A. Svetlichny, A.M. Konakova, R.V. Lytvyn, P.M. Lytvyn, O.S. Milenin, V.V. 2017-06-14T07:53:30Z 2017-06-14T07:53:30Z 2002 Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing / V.L. Litvinov, K.D. Demakov, O.A. Agueev, A.M. Svetlichny, R.V. Konakova, P.M. Lytvyn, O.S. Lytvyn, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 457-464. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 73.40.Ns, 73.30.+y https://nasplib.isofts.kiev.ua/handle/123456789/121364 Using X-ray phase analysis, Auger electron spectroscopy and atomic force microscopy, we investigated structural-phase transformations in the Ni/n-21R-SiC system induced by rapid thermal annealing in a vacuum (pressure of 10-² Pa) in the 450-1100 °С temperature range. It was found that modification of contact I-V curves from barrier-type to ohmic is due to appearance of local contact areas with different barrier heights (among them areas with ohmic conduction). Generation of the above nonuniformities results from intense heterodiffusion of the system components, as well as formation and recrystallization of various nickel silicide phases (differing in stoichiometry) and degradation of planar uniformity of both interface and Ni film. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing Article published earlier |
| spellingShingle | Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing Litvinov, V.L. Demakov, K.D. Agueev, O.A. Svetlichny, A.M. Konakova, R.V. Lytvyn, P.M. Lytvyn, O.S. Milenin, V.V. |
| title | Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing |
| title_full | Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing |
| title_fullStr | Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing |
| title_full_unstemmed | Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing |
| title_short | Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing |
| title_sort | evolution of structural and electrophysical parameters of ni/sic contacts at rapid thermal annealing |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121364 |
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