Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS

The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ranges is carried out from the viewpoint of interaction of conductivity electrons...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2002
Автори: Freik, D.M., Nykyruy, L.I., Shperun, V.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121369
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS / D.M. Freik, L.I. Nykyruy, V.M. Shperun // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 362-367. — Бібліогр.: 25 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121369
record_format dspace
spelling Freik, D.M.
Nykyruy, L.I.
Shperun, V.M.
2017-06-14T07:58:56Z
2017-06-14T07:58:56Z
2002
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS / D.M. Freik, L.I. Nykyruy, V.M. Shperun // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 362-367. — Бібліогр.: 25 назв. — англ.
1560-8034
PACS: 71.15.Cr, 72.10.-d, 72.20.-Dp.
https://nasplib.isofts.kiev.ua/handle/123456789/121369
The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ranges is carried out from the viewpoint of interaction of conductivity electrons with deformation potentials of acoustic and optical phonons, polarizing potential of optical phonons, screening Coulombic and short-range potentials of vacancies. It has been shown that the agreement of theoretical and experimental results takes place when taking into account the carrier scattering both on phonons and ionized vacancies.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS
spellingShingle Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS
Freik, D.M.
Nykyruy, L.I.
Shperun, V.M.
title_short Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS
title_full Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS
title_fullStr Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS
title_full_unstemmed Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS
title_sort scattering mechanisms of electrons in monocrystalline pbte, pbse and pbs
author Freik, D.M.
Nykyruy, L.I.
Shperun, V.M.
author_facet Freik, D.M.
Nykyruy, L.I.
Shperun, V.M.
publishDate 2002
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ranges is carried out from the viewpoint of interaction of conductivity electrons with deformation potentials of acoustic and optical phonons, polarizing potential of optical phonons, screening Coulombic and short-range potentials of vacancies. It has been shown that the agreement of theoretical and experimental results takes place when taking into account the carrier scattering both on phonons and ionized vacancies.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121369
citation_txt Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS / D.M. Freik, L.I. Nykyruy, V.M. Shperun // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 362-367. — Бібліогр.: 25 назв. — англ.
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