Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS
The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ranges is carried out from the viewpoint of interaction of conductivity electrons...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2002 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121369 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS / D.M. Freik, L.I. Nykyruy, V.M. Shperun // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 362-367. — Бібліогр.: 25 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121369 |
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Freik, D.M. Nykyruy, L.I. Shperun, V.M. 2017-06-14T07:58:56Z 2017-06-14T07:58:56Z 2002 Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS / D.M. Freik, L.I. Nykyruy, V.M. Shperun // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 362-367. — Бібліогр.: 25 назв. — англ. 1560-8034 PACS: 71.15.Cr, 72.10.-d, 72.20.-Dp. https://nasplib.isofts.kiev.ua/handle/123456789/121369 The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ranges is carried out from the viewpoint of interaction of conductivity electrons with deformation potentials of acoustic and optical phonons, polarizing potential of optical phonons, screening Coulombic and short-range potentials of vacancies. It has been shown that the agreement of theoretical and experimental results takes place when taking into account the carrier scattering both on phonons and ionized vacancies. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS |
| spellingShingle |
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS Freik, D.M. Nykyruy, L.I. Shperun, V.M. |
| title_short |
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS |
| title_full |
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS |
| title_fullStr |
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS |
| title_full_unstemmed |
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS |
| title_sort |
scattering mechanisms of electrons in monocrystalline pbte, pbse and pbs |
| author |
Freik, D.M. Nykyruy, L.I. Shperun, V.M. |
| author_facet |
Freik, D.M. Nykyruy, L.I. Shperun, V.M. |
| publishDate |
2002 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ranges is carried out from the viewpoint of interaction of conductivity electrons with deformation potentials of acoustic and optical phonons, polarizing potential of optical phonons, screening Coulombic and short-range potentials of vacancies. It has been shown that the agreement of theoretical and experimental results takes place when taking into account the carrier scattering both on phonons and ionized vacancies.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121369 |
| citation_txt |
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS / D.M. Freik, L.I. Nykyruy, V.M. Shperun // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 362-367. — Бібліогр.: 25 назв. — англ. |
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2025-11-27T20:04:15Z |
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2025-11-27T20:04:15Z |
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