Fabrication and electrical characteristics of nano black phosphorus thin film transistor
This text introduced a method to fabricate black phosphorus(BP) nanosheet field effect transistor(FET). The X ray diffraction analysis, scanning electron microscopy, and FET performance of the black phosphorus products were analyzed, and the output characteristic curves and the transfer characterist...
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| Опубліковано в: : | Functional Materials |
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| Дата: | 2016 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2016
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121408 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Fabrication and electrical characteristics of nano black phosphorus thin film transistor / Wang Lie-long // Functional Materials. — 2016. — Т. 23, № 3. — С. 404-407. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862683018634723328 |
|---|---|
| author | Wang Lie-long |
| author_facet | Wang Lie-long |
| citation_txt | Fabrication and electrical characteristics of nano black phosphorus thin film transistor / Wang Lie-long // Functional Materials. — 2016. — Т. 23, № 3. — С. 404-407. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | This text introduced a method to fabricate black phosphorus(BP) nanosheet field effect transistor(FET). The X ray diffraction analysis, scanning electron microscopy, and FET performance of the black phosphorus products were analyzed, and the output characteristic curves and the transfer characteristic curves were obtained. When BP's thickness was 14nm, the hole mobility was 244 cm2/Vs and on/off ratio was ~10³. The result shows that black phosphorus nanosheet field effect transistor has good on/off ratio and hole mobility. It will lay an important foundation for future optoelectronic devices as an alternative material.
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| first_indexed | 2025-12-07T15:54:29Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121408 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T15:54:29Z |
| publishDate | 2016 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Wang Lie-long 2017-06-14T09:39:14Z 2017-06-14T09:39:14Z 2016 Fabrication and electrical characteristics of nano black phosphorus thin film transistor / Wang Lie-long // Functional Materials. — 2016. — Т. 23, № 3. — С. 404-407. — Бібліогр.: 15 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm23.03.404 https://nasplib.isofts.kiev.ua/handle/123456789/121408 This text introduced a method to fabricate black phosphorus(BP) nanosheet field effect transistor(FET). The X ray diffraction analysis, scanning electron microscopy, and FET performance of the black phosphorus products were analyzed, and the output characteristic curves and the transfer characteristic curves were obtained. When BP's thickness was 14nm, the hole mobility was 244 cm2/Vs and on/off ratio was ~10³. The result shows that black phosphorus nanosheet field effect transistor has good on/off ratio and hole mobility. It will lay an important foundation for future optoelectronic devices as an alternative material. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Fabrication and electrical characteristics of nano black phosphorus thin film transistor Article published earlier |
| spellingShingle | Fabrication and electrical characteristics of nano black phosphorus thin film transistor Wang Lie-long Characterization and properties |
| title | Fabrication and electrical characteristics of nano black phosphorus thin film transistor |
| title_full | Fabrication and electrical characteristics of nano black phosphorus thin film transistor |
| title_fullStr | Fabrication and electrical characteristics of nano black phosphorus thin film transistor |
| title_full_unstemmed | Fabrication and electrical characteristics of nano black phosphorus thin film transistor |
| title_short | Fabrication and electrical characteristics of nano black phosphorus thin film transistor |
| title_sort | fabrication and electrical characteristics of nano black phosphorus thin film transistor |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121408 |
| work_keys_str_mv | AT wanglielong fabricationandelectricalcharacteristicsofnanoblackphosphorusthinfilmtransistor |