Fabrication and electrical characteristics of nano black phosphorus thin film transistor

• Veröffentlicht in: Functional Materials
• Datum: 2016
• 1. Verfasser: Wang Lie-long
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2016
• Schlagworte: Characterization and properties
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121408
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Fabrication and electrical characteristics of nano black phosphorus thin film transistor / Wang Lie-long // Functional Materials. — 2016. — Т. 23, № 3. — С. 404-407. — Бібліогр.: 15 назв. — англ.

This text introduced a method to fabricate black phosphorus(BP) nanosheet field effect transistor(FET). The X ray diffraction analysis, scanning electron microscopy, and FET performance of the black phosphorus products were analyzed, and the output characteristic curves and the transfer characterist...