The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure
Numerical simulation based on FPLAPW calculations is applied to study the lattice parameters, bulk modulus, band energy and optical properties of the zincblende binary solids AlN, GaN, InN under hydrostatic pressure. The results obtained are in a good agreement with experimental and theoretical valu...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2006 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121424 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure / S. Berrah, H. Abid, A. Boukortt // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 12-16. — Бібліогр.: 43 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862538826290823168 |
|---|---|
| author | Berrah, S. Abid, H. Boukortt, A. |
| author_facet | Berrah, S. Abid, H. Boukortt, A. |
| citation_txt | The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure / S. Berrah, H. Abid, A. Boukortt // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 12-16. — Бібліогр.: 43 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Numerical simulation based on FPLAPW calculations is applied to study the lattice parameters, bulk modulus, band energy and optical properties of the zincblende binary solids AlN, GaN, InN under hydrostatic pressure. The results obtained are in a good agreement with experimental and theoretical values.
|
| first_indexed | 2025-11-24T14:58:00Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121424 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T14:58:00Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Berrah, S. Abid, H. Boukortt, A. 2017-06-14T10:10:12Z 2017-06-14T10:10:12Z 2006 The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure / S. Berrah, H. Abid, A. Boukortt // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 12-16. — Бібліогр.: 43 назв. — англ. 1560-8034 PACS 71.20.Mq, 78.40.Fy https://nasplib.isofts.kiev.ua/handle/123456789/121424 Numerical simulation based on FPLAPW calculations is applied to study the lattice parameters, bulk modulus, band energy and optical properties of the zincblende binary solids AlN, GaN, InN under hydrostatic pressure. The results obtained are in a good agreement with experimental and theoretical values. We would like to acknowledge S.Q. Wang from
 Shenyang National Laboratory for Materials Science,
 Institute of Metal Research, Chinese (republic of China)
 and K. Louzazna from university of Béjaia (Algéria) for
 their help. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure Article published earlier |
| spellingShingle | The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure Berrah, S. Abid, H. Boukortt, A. |
| title | The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure |
| title_full | The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure |
| title_fullStr | The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure |
| title_full_unstemmed | The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure |
| title_short | The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure |
| title_sort | first principle calculation of electronic and optical properties of aln, gan and inn compounds under hydrostatic pressure |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121424 |
| work_keys_str_mv | AT berrahs thefirstprinciplecalculationofelectronicandopticalpropertiesofalnganandinncompoundsunderhydrostaticpressure AT abidh thefirstprinciplecalculationofelectronicandopticalpropertiesofalnganandinncompoundsunderhydrostaticpressure AT boukortta thefirstprinciplecalculationofelectronicandopticalpropertiesofalnganandinncompoundsunderhydrostaticpressure AT berrahs firstprinciplecalculationofelectronicandopticalpropertiesofalnganandinncompoundsunderhydrostaticpressure AT abidh firstprinciplecalculationofelectronicandopticalpropertiesofalnganandinncompoundsunderhydrostaticpressure AT boukortta firstprinciplecalculationofelectronicandopticalpropertiesofalnganandinncompoundsunderhydrostaticpressure |