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The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure

Numerical simulation based on FPLAPW calculations is applied to study the lattice parameters, bulk modulus, band energy and optical properties of the zincblende binary solids AlN, GaN, InN under hydrostatic pressure. The results obtained are in a good agreement with experimental and theoretical valu...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2006
Hauptverfasser: Berrah, S., Abid, H., Boukortt, A.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121424
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure / S. Berrah, H. Abid, A. Boukortt // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 12-16. — Бібліогр.: 43 назв. — англ.

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