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The influence of Cr concentration on time resolution of GaAs detectors

Investigated in this work were the influence of Cr dopant concentration and technological conditions of doping on photoconductivity (PhC) kinetics, dependence of PhC signal magnitude on voltage applied as well as the dynamic range of a photodetector based on semi-insulating GaAs:Cr. PhC relaxation w...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2006
Hauptverfasser: Fedorenko, L.L., Linnik, L.F., Linnik, L.G., Yusupov, M.M., Solovyov, E.A., Sirmulis, E.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121425
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:The influence of Cr concentration on time resolution of GaAs detectors / L.L. Fedorenko, L.F. Linnik, L.G. Linnik, M.M. Yusupov, E.A. Solovyov, E. Sirmulis // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 92-94. — Бібліогр.: 6 назв. — англ.

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