Simulation of strain fields in GaSb/InAs heteroepitaxial system
Mechanical strains taking place in GaSb/InAs heterosystem in the presence of misfit dislocation network are investigated. Distributions of energy of strains and deformations in the system with misfit dislocation network were found using two-dimensional simulation. The radius of the dislocation core,...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2006 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121427 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Simulation of strain fields in GaSb/InAs heteroepitaxial system / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 23-25. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862569419357552640 |
|---|---|
| author | Shutov, S.V. Baganov, Ye.A. |
| author_facet | Shutov, S.V. Baganov, Ye.A. |
| citation_txt | Simulation of strain fields in GaSb/InAs heteroepitaxial system / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 23-25. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Mechanical strains taking place in GaSb/InAs heterosystem in the presence of misfit dislocation network are investigated. Distributions of energy of strains and deformations in the system with misfit dislocation network were found using two-dimensional simulation. The radius of the dislocation core, depths of the strain penetration into the substrate and epitaxial layer as well as change of the material bandgaps near the heterointerface were calculated.
|
| first_indexed | 2025-11-26T01:42:47Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121427 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T01:42:47Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Shutov, S.V. Baganov, Ye.A. 2017-06-14T10:13:39Z 2017-06-14T10:13:39Z 2006 Simulation of strain fields in GaSb/InAs heteroepitaxial system / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 23-25. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 81.05.Ea, 83.85.St, 68.35.Ct https://nasplib.isofts.kiev.ua/handle/123456789/121427 Mechanical strains taking place in GaSb/InAs heterosystem in the presence of misfit dislocation network are investigated. Distributions of energy of strains and deformations in the system with misfit dislocation network were found using two-dimensional simulation. The radius of the dislocation core, depths of the strain penetration into the substrate and epitaxial layer as well as change of the material bandgaps near the heterointerface were calculated. The authors thank DSc, Professor I.V. Kurylo for his
 useful discussions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Simulation of strain fields in GaSb/InAs heteroepitaxial system Article published earlier |
| spellingShingle | Simulation of strain fields in GaSb/InAs heteroepitaxial system Shutov, S.V. Baganov, Ye.A. |
| title | Simulation of strain fields in GaSb/InAs heteroepitaxial system |
| title_full | Simulation of strain fields in GaSb/InAs heteroepitaxial system |
| title_fullStr | Simulation of strain fields in GaSb/InAs heteroepitaxial system |
| title_full_unstemmed | Simulation of strain fields in GaSb/InAs heteroepitaxial system |
| title_short | Simulation of strain fields in GaSb/InAs heteroepitaxial system |
| title_sort | simulation of strain fields in gasb/inas heteroepitaxial system |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121427 |
| work_keys_str_mv | AT shutovsv simulationofstrainfieldsingasbinasheteroepitaxialsystem AT baganovyea simulationofstrainfieldsingasbinasheteroepitaxialsystem |