Simulation of strain fields in GaSb/InAs heteroepitaxial system

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2006
• Main Authors: Shutov, S.V., Baganov, Ye.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121427
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Simulation of strain fields in GaSb/InAs heteroepitaxial system / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 23-25. — Бібліогр.: 7 назв. — англ.

Mechanical strains taking place in GaSb/InAs heterosystem in the presence of misfit dislocation network are investigated. Distributions of energy of strains and deformations in the system with misfit dislocation network were found using two-dimensional simulation. The radius of the dislocation core,...