Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy
The thermodynamical theory of nanodomain tailoring in ferroelectrics-semiconductors allowing for semiconducting properties, screening and size effects is presented. The obtained analytical results prove that domains appearance is similar to the first order phase transition and completely agree with...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2006 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121428 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy / A.N. Morozovska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 26-33. — Бібліогр.: 43 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862714482998902784 |
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| author | Morozovska, A.N. |
| author_facet | Morozovska, A.N. |
| citation_txt | Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy / A.N. Morozovska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 26-33. — Бібліогр.: 43 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The thermodynamical theory of nanodomain tailoring in ferroelectrics-semiconductors allowing for semiconducting properties, screening and size effects is presented. The obtained analytical results prove that domains appearance is similar to the first order phase transition and completely agree with experimentally observed threshold nanodomains recording in Pb(Zr,Ti)O₃ and LiTaO₃ thin films. The realistic dependence of equilibrium nanodomain radius over applied voltage in BaTiO₃ LiNbO₃ ferroelectric-semiconductors, LiTaO₃ and Pb(Zr,Ti)O₃ thin films have been calculated. These results will help researchers both to achieve the reliable understanding of physical process taking place during nanoscale polarization reversal in the ferroelectric-semiconducting media and to determine the necessary conditions in order to record stable nanodomains with optimum lateral sizes and configuration to increase recording density and create various profiled microstructures.
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| first_indexed | 2025-12-07T17:51:30Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121428 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:51:30Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Morozovska, A.N. 2017-06-14T10:14:25Z 2017-06-14T10:14:25Z 2006 Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy / A.N. Morozovska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 26-33. — Бібліогр.: 43 назв. — англ. 1560-8034 PACS 77.80.-e, 77.80.Dj, 61.43.-j https://nasplib.isofts.kiev.ua/handle/123456789/121428 The thermodynamical theory of nanodomain tailoring in ferroelectrics-semiconductors allowing for semiconducting properties, screening and size effects is presented. The obtained analytical results prove that domains appearance is similar to the first order phase transition and completely agree with experimentally observed threshold nanodomains recording in Pb(Zr,Ti)O₃ and LiTaO₃ thin films. The realistic dependence of equilibrium nanodomain radius over applied voltage in BaTiO₃ LiNbO₃ ferroelectric-semiconductors, LiTaO₃ and Pb(Zr,Ti)O₃ thin films have been calculated. These results will help researchers both to achieve the reliable understanding of physical process taking place during nanoscale polarization reversal in the ferroelectric-semiconducting media and to determine the necessary conditions in order to record stable nanodomains with optimum lateral sizes and configuration to increase recording density and create various profiled microstructures. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy Article published earlier |
| spellingShingle | Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy Morozovska, A.N. |
| title | Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy |
| title_full | Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy |
| title_fullStr | Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy |
| title_full_unstemmed | Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy |
| title_short | Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy |
| title_sort | modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121428 |
| work_keys_str_mv | AT morozovskaan modellingofmicroandnanodomainarraysrecordedinferroelectricssemiconductorsbyusingatomicforcemicroscopy |