Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs
In the information sciences such as computer science, telecommunications, the treatment of signal or image transmission, the field effect components play an important role. In the frame of our work, we are interested in the study of the gallium arsenide short gate field effect transistor called GaAs...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2006 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121429 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs / S. Khemissi, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 34-39. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862706170985185280 |
|---|---|
| author | Khemissi, S. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. Amourache, S. |
| author_facet | Khemissi, S. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. Amourache, S. |
| citation_txt | Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs / S. Khemissi, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 34-39. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In the information sciences such as computer science, telecommunications, the treatment of signal or image transmission, the field effect components play an important role. In the frame of our work, we are interested in the study of the gallium arsenide short gate field effect transistor called GaAs MESFET. After analytical studying the component static characteristics, according to different operation regimes, a numerical simulation was worked out. The influence of technological dimensions (L, Z, a, and Nd) was studied. The obtained results allow us to determine optimal parameters of the devices from the viewpoint of their applications and specific use.
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| first_indexed | 2025-12-07T16:58:26Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121429 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:58:26Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Khemissi, S. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. Amourache, S. 2017-06-14T10:15:30Z 2017-06-14T10:15:30Z 2006 Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs / S. Khemissi, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 34-39. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 85.30.Tv https://nasplib.isofts.kiev.ua/handle/123456789/121429 In the information sciences such as computer science, telecommunications, the treatment of signal or image transmission, the field effect components play an important role. In the frame of our work, we are interested in the study of the gallium arsenide short gate field effect transistor called GaAs MESFET. After analytical studying the component static characteristics, according to different operation regimes, a numerical simulation was worked out. The influence of technological dimensions (L, Z, a, and Nd) was studied. The obtained results allow us to determine optimal parameters of the devices from the viewpoint of their applications and specific use. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs Article published earlier |
| spellingShingle | Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs Khemissi, S. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. Amourache, S. |
| title | Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs |
| title_full | Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs |
| title_fullStr | Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs |
| title_full_unstemmed | Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs |
| title_short | Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs |
| title_sort | influence of physical and geometrical parameters on electrical properties of short gate gaas mesfets |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121429 |
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