Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2006
• Main Authors: Khemissi, S., Merabtine, N., Zaabat, M., Kenzai, C., Saidi, Y., Amourache, S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121429
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs / S. Khemissi, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 34-39. — Бібліогр.: 9 назв. — англ.

In the information sciences such as computer science, telecommunications, the treatment of signal or image transmission, the field effect components play an important role. In the frame of our work, we are interested in the study of the gallium arsenide short gate field effect transistor called GaAs...