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Fabrication and characterization of a 0.14 μm CMOS device using ATHENA and ATLAS simulators

A 0.14 µm CMOS transistor with two levels of interconnection was designed and simulated to investigate its functionality and characteristics. ATHENA and ATLAS simulators were used to simulate the fabrication process and to validate the electrical characteristics, respectively. A scaling factor of 0....

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2006
Main Authors: Ahmad, Ibrahim, Ho, Yeap Kim, Majlis, Burhanuddin Yeop
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121430
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Fabrication and characterization of a 0.14 μm CMOS device using ATHENA and ATLAS simulators / Ibrahim Ahmad, Yeap Kim Ho, Burhanuddin Yeop Majlis // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 40-44. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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