Micropatterning in bistable cholesteric device with Bragg's reflection
In this work, the method to form bistable patterning in a cholesteric cell with Bragg’s reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO₂ structure in which a potential relief on SiO₂ surface is induced due to enrichment and depletion of required for...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2006 |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121435 |
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| Zitieren: | Micropatterning in bistable cholesteric device with Bragg's reflection / M.I. Gritsenko, S.I. Kucheev, P.M. Lytvyn, V.G. Tishenko, V.M. Tkach, V.B. Yelshansky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 61-64. — Бібліогр.: 14 назв. — англ. |
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Gritsenko, M.I. Kucheev, S.I. Lytvyn, P.M. Tishenko, V.G. Tkach, V.M. Yelshansky, V.B. 2017-06-14T10:54:40Z 2017-06-14T10:54:40Z 2006 Micropatterning in bistable cholesteric device with Bragg's reflection / M.I. Gritsenko, S.I. Kucheev, P.M. Lytvyn, V.G. Tishenko, V.M. Tkach, V.B. Yelshansky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 61-64. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 42.79.Kr, 89.75 Kd https://nasplib.isofts.kiev.ua/handle/123456789/121435 In this work, the method to form bistable patterning in a cholesteric cell with Bragg’s reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO₂ structure in which a potential relief on SiO₂ surface is induced due to enrichment and depletion of required form areas of the silicon near-surface layer during external electric field action. The patterning of enrichment is determined by the positive charge embedded into SiO₂ film, which is formed by thermodiffusion of aluminum atoms. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Micropatterning in bistable cholesteric device with Bragg's reflection Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Micropatterning in bistable cholesteric device with Bragg's reflection |
| spellingShingle |
Micropatterning in bistable cholesteric device with Bragg's reflection Gritsenko, M.I. Kucheev, S.I. Lytvyn, P.M. Tishenko, V.G. Tkach, V.M. Yelshansky, V.B. |
| title_short |
Micropatterning in bistable cholesteric device with Bragg's reflection |
| title_full |
Micropatterning in bistable cholesteric device with Bragg's reflection |
| title_fullStr |
Micropatterning in bistable cholesteric device with Bragg's reflection |
| title_full_unstemmed |
Micropatterning in bistable cholesteric device with Bragg's reflection |
| title_sort |
micropatterning in bistable cholesteric device with bragg's reflection |
| author |
Gritsenko, M.I. Kucheev, S.I. Lytvyn, P.M. Tishenko, V.G. Tkach, V.M. Yelshansky, V.B. |
| author_facet |
Gritsenko, M.I. Kucheev, S.I. Lytvyn, P.M. Tishenko, V.G. Tkach, V.M. Yelshansky, V.B. |
| publishDate |
2006 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
In this work, the method to form bistable patterning in a cholesteric cell with Bragg’s reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO₂ structure in which a potential relief on SiO₂ surface is induced due to enrichment and depletion of required form areas of the silicon near-surface layer during external electric field action. The patterning of enrichment is determined by the positive charge embedded into SiO₂ film, which is formed by thermodiffusion of aluminum atoms.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121435 |
| citation_txt |
Micropatterning in bistable cholesteric device with Bragg's reflection / M.I. Gritsenko, S.I. Kucheev, P.M. Lytvyn, V.G. Tishenko, V.M. Tkach, V.B. Yelshansky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 61-64. — Бібліогр.: 14 назв. — англ. |
| work_keys_str_mv |
AT gritsenkomi micropatterninginbistablecholestericdevicewithbraggsreflection AT kucheevsi micropatterninginbistablecholestericdevicewithbraggsreflection AT lytvynpm micropatterninginbistablecholestericdevicewithbraggsreflection AT tishenkovg micropatterninginbistablecholestericdevicewithbraggsreflection AT tkachvm micropatterninginbistablecholestericdevicewithbraggsreflection AT yelshanskyvb micropatterninginbistablecholestericdevicewithbraggsreflection |
| first_indexed |
2025-12-07T20:20:55Z |
| last_indexed |
2025-12-07T20:20:55Z |
| _version_ |
1850882240321421312 |