Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x
We consider the growth technology and investigations of indium antimonide doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio. The optimal modes of single crystal synthesis and crystallization are determined. It is shown that, when doping the indium antimonide,...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2006 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121438 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x / E.F. Venger, L.M. Knorozok, L.Yu. Melnichuk, O.V. Melnichuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 80-86. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862553789048815616 |
|---|---|
| author | Venger, E.F. Knorozok, L.M. Melnichuk, L.Yu. Melnichuk, O.V. |
| author_facet | Venger, E.F. Knorozok, L.M. Melnichuk, L.Yu. Melnichuk, O.V. |
| citation_txt | Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x / E.F. Venger, L.M. Knorozok, L.Yu. Melnichuk, O.V. Melnichuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 80-86. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We consider the growth technology and investigations of indium antimonide doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio. The optimal modes of single crystal synthesis and crystallization are determined. It is shown that, when doping the indium antimonide, its lattice parameter changes considerably. This leads to deformation of the electron energy spectrum, changes the bandgap and charge carrier effective mass and affects the optical and electrical properties of indium antimonide samples. As a result, such material becomes suitable for fabrication of IR photodetectors.
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| first_indexed | 2025-11-25T21:20:35Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121438 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T21:20:35Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Venger, E.F. Knorozok, L.M. Melnichuk, L.Yu. Melnichuk, O.V. 2017-06-14T10:57:59Z 2017-06-14T10:57:59Z 2006 Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x / E.F. Venger, L.M. Knorozok, L.Yu. Melnichuk, O.V. Melnichuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 80-86. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 72.80.Ey, 78.30.Fs https://nasplib.isofts.kiev.ua/handle/123456789/121438 We consider the growth technology and investigations of indium antimonide doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio. The optimal modes of single crystal synthesis and crystallization are determined. It is shown that, when doping the indium antimonide, its lattice parameter changes considerably. This leads to deformation of the electron energy spectrum, changes the bandgap and charge carrier effective mass and affects the optical and electrical properties of indium antimonide samples. As a result, such material becomes suitable for fabrication of IR photodetectors. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x Article published earlier |
| spellingShingle | Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x Venger, E.F. Knorozok, L.M. Melnichuk, L.Yu. Melnichuk, O.V. |
| title | Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x |
| title_full | Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x |
| title_fullStr | Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x |
| title_full_unstemmed | Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x |
| title_short | Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x |
| title_sort | synthesis and properties of semiconductor solid solutions (insb)₁₋x(cdte)x |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121438 |
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