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Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x

We consider the growth technology and investigations of indium antimonide doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio. The optimal modes of single crystal synthesis and crystallization are determined. It is shown that, when doping the indium antimonide,...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2006
Main Authors: Venger, E.F., Knorozok, L.M., Melnichuk, L.Yu., Melnichuk, O.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121438
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x / E.F. Venger, L.M. Knorozok, L.Yu. Melnichuk, O.V. Melnichuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 80-86. — Бібліогр.: 11 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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