Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals

IR spectroscopy study is indicative of the change in the relative concentration of interstitial oxygen in silicon monocrystals after their treatment by using the magnetic field. This is an evidence of a considerable effect of magnetic field on the defect structure of the investigated crystals.

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2006
Hauptverfasser: Makara, V.A., Steblenko, L.P., Kolchenko, Yu.L., Naumenko, S.M., Lisovsky, I.P., Mazunov, D.O., Mokliak, Yu.Yu.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121440
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals / V.A. Makara, L.P. Steblenko, Yu.L. Kolchenko, S.M. Naumenko, I.P. Lisovsky, D.O. Mazunov, Yu.Yu. Mokliak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 1-3. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121440
record_format dspace
spelling Makara, V.A.
Steblenko, L.P.
Kolchenko, Yu.L.
Naumenko, S.M.
Lisovsky, I.P.
Mazunov, D.O.
Mokliak, Yu.Yu.
2017-06-14T11:01:37Z
2017-06-14T11:01:37Z
2006
Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals / V.A. Makara, L.P. Steblenko, Yu.L. Kolchenko, S.M. Naumenko, I.P. Lisovsky, D.O. Mazunov, Yu.Yu. Mokliak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 1-3. — Бібліогр.: 9 назв. — англ.
1560-8034
PACS 81.40.-z
https://nasplib.isofts.kiev.ua/handle/123456789/121440
IR spectroscopy study is indicative of the change in the relative concentration of interstitial oxygen in silicon monocrystals after their treatment by using the magnetic field. This is an evidence of a considerable effect of magnetic field on the defect structure of the investigated crystals.
This work was partially supported by Joint fundamental investigations project of State Fund of fundamental investigations of Ukraine and Belarussian Republican Fund of fundamental investigations “DFFD– BRFFD–2005” (project No 10.01/008).
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals
spellingShingle Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals
Makara, V.A.
Steblenko, L.P.
Kolchenko, Yu.L.
Naumenko, S.M.
Lisovsky, I.P.
Mazunov, D.O.
Mokliak, Yu.Yu.
title_short Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals
title_full Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals
title_fullStr Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals
title_full_unstemmed Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals
title_sort effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals
author Makara, V.A.
Steblenko, L.P.
Kolchenko, Yu.L.
Naumenko, S.M.
Lisovsky, I.P.
Mazunov, D.O.
Mokliak, Yu.Yu.
author_facet Makara, V.A.
Steblenko, L.P.
Kolchenko, Yu.L.
Naumenko, S.M.
Lisovsky, I.P.
Mazunov, D.O.
Mokliak, Yu.Yu.
publishDate 2006
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description IR spectroscopy study is indicative of the change in the relative concentration of interstitial oxygen in silicon monocrystals after their treatment by using the magnetic field. This is an evidence of a considerable effect of magnetic field on the defect structure of the investigated crystals.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121440
citation_txt Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals / V.A. Makara, L.P. Steblenko, Yu.L. Kolchenko, S.M. Naumenko, I.P. Lisovsky, D.O. Mazunov, Yu.Yu. Mokliak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 1-3. — Бібліогр.: 9 назв. — англ.
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first_indexed 2025-12-07T13:17:43Z
last_indexed 2025-12-07T13:17:43Z
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