Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2006
• ISSN: 1560-8034
• Hauptverfasser: Makara, V.A., Steblenko, L.P., Kolchenko, Yu.L., Naumenko, S.M., Lisovsky, I.P., Mazunov, D.O., Mokliak, Yu.Yu.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121440
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals / V.A. Makara, L.P. Steblenko, Yu.L. Kolchenko, S.M. Naumenko, I.P. Lisovsky, D.O. Mazunov, Yu.Yu. Mokliak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 1-3. — Бібліогр.: 9 назв. — англ.

IR spectroscopy study is indicative of the change in the relative concentration of interstitial oxygen in silicon monocrystals after their treatment by using the magnetic field. This is an evidence of a considerable effect of magnetic field on the defect structure of the investigated crystals.