Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta
The influence of γ-quanta irradiation on photoelectrical and optical properties of lamellar GaS single crystals at different temperatures has been investigated. It is determined that the irradiation of pure crystals at the radiation dose equal to 30 krad results in the creation of shallow compensati...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2006 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121442 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta / R.S. Madatov, B.G. Tagiyev, A.I. Najafov, T.B. Tagiyev, I.A. Gabulov, Sh.P. Shakili // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 8-11. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862625151472893952 |
|---|---|
| author | Madatov, R.S. Tagiyev, B.G. Najafov, A.I. Tagiyev, T.B. Gabulov, I.A. Shakili, Sh.P. |
| author_facet | Madatov, R.S. Tagiyev, B.G. Najafov, A.I. Tagiyev, T.B. Gabulov, I.A. Shakili, Sh.P. |
| citation_txt | Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta / R.S. Madatov, B.G. Tagiyev, A.I. Najafov, T.B. Tagiyev, I.A. Gabulov, Sh.P. Shakili // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 8-11. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The influence of γ-quanta irradiation on photoelectrical and optical properties of lamellar GaS single crystals at different temperatures has been investigated. It is determined that the irradiation of pure crystals at the radiation dose equal to 30 krad results in the creation of shallow compensative acceptors, which are photoactive recombination centers (r-centers), and as a result of this both the photosensitivity and a luminescence connected with r-centers are increased. Irradiation with a radiation dose more than 100 krad results in the quenching of both photosensitivity and recombination luminescence due to formation of complexes [VGa VS]. It is proposed that radiative recombination centers arising in the course of irradiation is conditioned by sulfur hole and interstitial gallium atoms.
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| first_indexed | 2025-12-07T13:34:20Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121442 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:34:20Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Madatov, R.S. Tagiyev, B.G. Najafov, A.I. Tagiyev, T.B. Gabulov, I.A. Shakili, Sh.P. 2017-06-14T11:05:16Z 2017-06-14T11:05:16Z 2006 Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta / R.S. Madatov, B.G. Tagiyev, A.I. Najafov, T.B. Tagiyev, I.A. Gabulov, Sh.P. Shakili // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 8-11. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 61.82.Fk, 71.55.-i, 78.55.-m https://nasplib.isofts.kiev.ua/handle/123456789/121442 The influence of γ-quanta irradiation on photoelectrical and optical properties of lamellar GaS single crystals at different temperatures has been investigated. It is determined that the irradiation of pure crystals at the radiation dose equal to 30 krad results in the creation of shallow compensative acceptors, which are photoactive recombination centers (r-centers), and as a result of this both the photosensitivity and a luminescence connected with r-centers are increased. Irradiation with a radiation dose more than 100 krad results in the quenching of both photosensitivity and recombination luminescence due to formation of complexes [VGa VS]. It is proposed that radiative recombination centers arising in the course of irradiation is conditioned by sulfur hole and interstitial gallium atoms. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta Article published earlier |
| spellingShingle | Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta Madatov, R.S. Tagiyev, B.G. Najafov, A.I. Tagiyev, T.B. Gabulov, I.A. Shakili, Sh.P. |
| title | Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta |
| title_full | Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta |
| title_fullStr | Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta |
| title_full_unstemmed | Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta |
| title_short | Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta |
| title_sort | optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121442 |
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