Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta

The influence of γ-quanta irradiation on photoelectrical and optical properties of lamellar GaS single crystals at different temperatures has been investigated. It is determined that the irradiation of pure crystals at the radiation dose equal to 30 krad results in the creation of shallow compensati...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2006
Hauptverfasser: Madatov, R.S., Tagiyev, B.G., Najafov, A.I., Tagiyev, T.B., Gabulov, I.A., Shakili, Sh.P.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121442
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta / R.S. Madatov, B.G. Tagiyev, A.I. Najafov, T.B. Tagiyev, I.A. Gabulov, Sh.P. Shakili // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 8-11. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121442
record_format dspace
spelling Madatov, R.S.
Tagiyev, B.G.
Najafov, A.I.
Tagiyev, T.B.
Gabulov, I.A.
Shakili, Sh.P.
2017-06-14T11:05:16Z
2017-06-14T11:05:16Z
2006
Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta / R.S. Madatov, B.G. Tagiyev, A.I. Najafov, T.B. Tagiyev, I.A. Gabulov, Sh.P. Shakili // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 8-11. — Бібліогр.: 12 назв. — англ.
1560-8034
PACS 61.82.Fk, 71.55.-i, 78.55.-m
https://nasplib.isofts.kiev.ua/handle/123456789/121442
The influence of γ-quanta irradiation on photoelectrical and optical properties of lamellar GaS single crystals at different temperatures has been investigated. It is determined that the irradiation of pure crystals at the radiation dose equal to 30 krad results in the creation of shallow compensative acceptors, which are photoactive recombination centers (r-centers), and as a result of this both the photosensitivity and a luminescence connected with r-centers are increased. Irradiation with a radiation dose more than 100 krad results in the quenching of both photosensitivity and recombination luminescence due to formation of complexes [VGa VS]. It is proposed that radiative recombination centers arising in the course of irradiation is conditioned by sulfur hole and interstitial gallium atoms.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta
spellingShingle Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta
Madatov, R.S.
Tagiyev, B.G.
Najafov, A.I.
Tagiyev, T.B.
Gabulov, I.A.
Shakili, Sh.P.
title_short Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta
title_full Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta
title_fullStr Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta
title_full_unstemmed Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta
title_sort optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta
author Madatov, R.S.
Tagiyev, B.G.
Najafov, A.I.
Tagiyev, T.B.
Gabulov, I.A.
Shakili, Sh.P.
author_facet Madatov, R.S.
Tagiyev, B.G.
Najafov, A.I.
Tagiyev, T.B.
Gabulov, I.A.
Shakili, Sh.P.
publishDate 2006
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The influence of γ-quanta irradiation on photoelectrical and optical properties of lamellar GaS single crystals at different temperatures has been investigated. It is determined that the irradiation of pure crystals at the radiation dose equal to 30 krad results in the creation of shallow compensative acceptors, which are photoactive recombination centers (r-centers), and as a result of this both the photosensitivity and a luminescence connected with r-centers are increased. Irradiation with a radiation dose more than 100 krad results in the quenching of both photosensitivity and recombination luminescence due to formation of complexes [VGa VS]. It is proposed that radiative recombination centers arising in the course of irradiation is conditioned by sulfur hole and interstitial gallium atoms.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121442
citation_txt Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta / R.S. Madatov, B.G. Tagiyev, A.I. Najafov, T.B. Tagiyev, I.A. Gabulov, Sh.P. Shakili // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 8-11. — Бібліогр.: 12 назв. — англ.
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