Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2006
• Hauptverfasser: Madatov, R.S., Tagiyev, B.G., Najafov, A.I., Tagiyev, T.B., Gabulov, I.A., Shakili, Sh.P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121442
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta / R.S. Madatov, B.G. Tagiyev, A.I. Najafov, T.B. Tagiyev, I.A. Gabulov, Sh.P. Shakili // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 8-11. — Бібліогр.: 12 назв. — англ.

The influence of γ-quanta irradiation on photoelectrical and optical properties of lamellar GaS single crystals at different temperatures has been investigated. It is determined that the irradiation of pure crystals at the radiation dose equal to 30 krad results in the creation of shallow compensati...