Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and limitations of these methods as well as a specific mechanism to reduce the disloca...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2016 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121516 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) / P.V. Parphenyuk, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 1-8. — Бібліогр.: 78 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862711596786122752 |
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| author | Parphenyuk, P.V. Evtukh, A.A. |
| author_facet | Parphenyuk, P.V. Evtukh, A.A. |
| citation_txt | Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) / P.V. Parphenyuk, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 1-8. — Бібліогр.: 78 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and limitations of these methods as well as a specific mechanism to reduce the dislocation amount are discussed. Usually, high densities of threading dislocations within the range 10¹⁰…10¹¹ cm⁻² are present in typical thin nitride films that are directly grown on sapphire substrate. Using these methods for substrate preparation, the density of dislocations can be reduced to the value 1·10⁷ cm⁻². An important process that enables to obtain the high-quality GaN layers with the low dislocation density is patterning the sapphire substrate. The dislocation density of these substrates depends on the pattern shape and orientation of patterned strips on cplane sapphire. Layers of GaN grown on a cone-shaped pattern have the lowest dislocation density. In addition, patterning the sapphire substrate increases the external quantum efficiency of radiative structures and reduces the mechanical stresses in the nitride layers.
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| first_indexed | 2025-12-07T17:31:14Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121516 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:31:14Z |
| publishDate | 2016 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Parphenyuk, P.V. Evtukh, A.A. 2017-06-14T15:10:29Z 2017-06-14T15:10:29Z 2016 Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) / P.V. Parphenyuk, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 1-8. — Бібліогр.: 78 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.001 PACS 61.72, 81.15 https://nasplib.isofts.kiev.ua/handle/123456789/121516 In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and limitations of these methods as well as a specific mechanism to reduce the dislocation amount are discussed. Usually, high densities of threading dislocations within the range 10¹⁰…10¹¹ cm⁻² are present in typical thin nitride films that are directly grown on sapphire substrate. Using these methods for substrate preparation, the density of dislocations can be reduced to the value 1·10⁷ cm⁻². An important process that enables to obtain the high-quality GaN layers with the low dislocation density is patterning the sapphire substrate. The dislocation density of these substrates depends on the pattern shape and orientation of patterned strips on cplane sapphire. Layers of GaN grown on a cone-shaped pattern have the lowest dislocation density. In addition, patterning the sapphire substrate increases the external quantum efficiency of radiative structures and reduces the mechanical stresses in the nitride layers. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) Article published earlier |
| spellingShingle | Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) Parphenyuk, P.V. Evtukh, A.A. |
| title | Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) |
| title_full | Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) |
| title_fullStr | Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) |
| title_full_unstemmed | Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) |
| title_short | Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) |
| title_sort | lowering the density of dislocations in heteroepitaxial iii-nitride layers: effect of sapphire substrate treatment (review) |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121516 |
| work_keys_str_mv | AT parphenyukpv loweringthedensityofdislocationsinheteroepitaxialiiinitridelayerseffectofsapphiresubstratetreatmentreview AT evtukhaa loweringthedensityofdislocationsinheteroepitaxialiiinitridelayerseffectofsapphiresubstratetreatmentreview |