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Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals

The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the silicon nanoclusters embedded into insulating SiO₂ matrix have been obtained...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2016
Main Authors: Bratus, O.L., Evtukh, A.A., Steblova, O.V., Prokopchuk, V.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121517
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals / O.L. Bratus, A.A. Evtukh, O.V. Steblova, V.M. Prokopchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 9-13. — Бібліогр.: 11 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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