Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation
Simulation of long-term changes in photoluminescence of n-GaAs after microwave treatment by using the analysis of random events underlying the processes of evolution of the defect structure has been performed. We have shown the agreement of the experimental and theoretical time dependences of the ch...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2016 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121518 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 14-22. — Бібліогр.: 32 назв. — англ. |
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Milenin, G.V. Red’ko, R.A. 2017-06-14T15:12:14Z 2017-06-14T15:12:14Z 2016 Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 14-22. — Бібліогр.: 32 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.014 PACS 61.72.Ff, 78.55.Cr, 78.60.-b https://nasplib.isofts.kiev.ua/handle/123456789/121518 Simulation of long-term changes in photoluminescence of n-GaAs after microwave treatment by using the analysis of random events underlying the processes of evolution of the defect structure has been performed. We have shown the agreement of the experimental and theoretical time dependences of the changes in the photoluminescence intensity provided that the distribution of the random variable – time to a random event – obeys the Weibull–Gnedenko law. The mechanisms of transformation of the defect structure, which are based on the dynamics of behavior of dislocations and impurity complexes owing to microwave irradiation, have been presented. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation |
| spellingShingle |
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation Milenin, G.V. Red’ko, R.A. |
| title_short |
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation |
| title_full |
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation |
| title_fullStr |
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation |
| title_full_unstemmed |
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation |
| title_sort |
physical mechanisms and models of the long-term transformations in radiative recombination observed in n-gaas under microwave irradiation |
| author |
Milenin, G.V. Red’ko, R.A. |
| author_facet |
Milenin, G.V. Red’ko, R.A. |
| publishDate |
2016 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Simulation of long-term changes in photoluminescence of n-GaAs after microwave treatment by using the analysis of random events underlying the processes of evolution of the defect structure has been performed. We have shown the agreement of the experimental and theoretical time dependences of the changes in the photoluminescence intensity provided that the distribution of the random variable – time to a random event – obeys the Weibull–Gnedenko law. The mechanisms of transformation of the defect structure, which are based on the dynamics of behavior of dislocations and impurity complexes owing to microwave irradiation, have been presented.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121518 |
| citation_txt |
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 14-22. — Бібліогр.: 32 назв. — англ. |
| work_keys_str_mv |
AT mileningv physicalmechanismsandmodelsofthelongtermtransformationsinradiativerecombinationobservedinngaasundermicrowaveirradiation AT redkora physicalmechanismsandmodelsofthelongtermtransformationsinradiativerecombinationobservedinngaasundermicrowaveirradiation |
| first_indexed |
2025-12-07T18:29:57Z |
| last_indexed |
2025-12-07T18:29:57Z |
| _version_ |
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