Аutomated method for determining the etch pits density on crystallographic planes of large semiconductor crystals
A method for express automatic evaluation of the dislocation density on the crystal surfaces has been developed. The work involves creation of a software that allows automatical determining the number of etch pits with a defined geometric shape, which are seen in the microscope view field, and calcu...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2016 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121519 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Аutomated method for determining the etch pits density on crystallographic planes of large semiconductor crystals / G.S. Pekar, А.А. Singaevsky, А.F. Singaevsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 23-27. — Бібліогр.: 6 назв. — англ. |