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Аutomated method for determining the etch pits density on crystallographic planes of large semiconductor crystals

A method for express automatic evaluation of the dislocation density on the crystal surfaces has been developed. The work involves creation of a software that allows automatical determining the number of etch pits with a defined geometric shape, which are seen in the microscope view field, and calcu...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2016
Hauptverfasser: Pekar, G.S., Singaevsky, А.А., Singaevsky, А.F.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121519
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Аutomated method for determining the etch pits density on crystallographic planes of large semiconductor crystals / G.S. Pekar, А.А. Singaevsky, А.F. Singaevsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 23-27. — Бібліогр.: 6 назв. — англ.

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