Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity
The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24·10¹⁴ e/cm²) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence intensity of samples previously loaded with US increased during long-term storage...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2016 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121521 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity / O.V. Konoreva, M.V. Lytovchenko, Ye.V. Malyi, Ya.M. Olikh, I.V. Petrenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 34-38. — Бібліогр.: 20 назв. — англ. |
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Konoreva, O.V. Lytovchenko, M.V. Malyi, Ye.V. Olikh, Ya.M. Petrenko, I.V. Pinkovska, M.B. Tartachnyk, V.P. 2017-06-14T15:14:14Z 2017-06-14T15:14:14Z 2016 Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity / O.V. Konoreva, M.V. Lytovchenko, Ye.V. Malyi, Ya.M. Olikh, I.V. Petrenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 34-38. — Бібліогр.: 20 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.034 PACS 29.40.-n, 85.30.-z, 85.60.Dw https://nasplib.isofts.kiev.ua/handle/123456789/121521 The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24·10¹⁴ e/cm²) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence intensity of samples previously loaded with US increased during long-term storage (t = 15 h). Passing the current through the diode generates the relaxation process of radiation brightness falling followed by the growth when ultrasound is switched on. The results of calculation of the dislocation density responsible for electroluminescence quenching within the region of electroluminescence degradation are adduced. It was found the ultrasound effect on diodes irradiated with high-energy electrons. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity |
| spellingShingle |
Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity Konoreva, O.V. Lytovchenko, M.V. Malyi, Ye.V. Olikh, Ya.M. Petrenko, I.V. Pinkovska, M.B. Tartachnyk, V.P. |
| title_short |
Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity |
| title_full |
Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity |
| title_fullStr |
Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity |
| title_full_unstemmed |
Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity |
| title_sort |
acoustic-stimulated relaxation of gaas₁₋хpх leds electroluminescence intensity |
| author |
Konoreva, O.V. Lytovchenko, M.V. Malyi, Ye.V. Olikh, Ya.M. Petrenko, I.V. Pinkovska, M.B. Tartachnyk, V.P. |
| author_facet |
Konoreva, O.V. Lytovchenko, M.V. Malyi, Ye.V. Olikh, Ya.M. Petrenko, I.V. Pinkovska, M.B. Tartachnyk, V.P. |
| publishDate |
2016 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24·10¹⁴ e/cm²) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence intensity of samples previously loaded with US increased during long-term storage (t = 15 h). Passing the current through the diode generates the relaxation process of radiation brightness falling followed by the growth when ultrasound is switched on. The results of calculation of the dislocation density responsible for electroluminescence quenching within the region of electroluminescence degradation are adduced. It was found the ultrasound effect on diodes irradiated with high-energy electrons.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121521 |
| citation_txt |
Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity / O.V. Konoreva, M.V. Lytovchenko, Ye.V. Malyi, Ya.M. Olikh, I.V. Petrenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 34-38. — Бібліогр.: 20 назв. — англ. |
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2025-12-07T19:54:29Z |
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