Baranskii, P., & Gaidar, G. (2016). Features of tensoresistance in single crystals of germanium and silicon with different dopants. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Baranskii, P.I, und G.P Gaidar. "Features of Tensoresistance in Single Crystals of Germanium and Silicon with Different Dopants." Semiconductor Physics Quantum Electronics & Optoelectronics 2016.
MLA-Zitierstil (8. Ausg.)Baranskii, P.I, und G.P Gaidar. "Features of Tensoresistance in Single Crystals of Germanium and Silicon with Different Dopants." Semiconductor Physics Quantum Electronics & Optoelectronics, 2016.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.