Features of tensoresistance in single crystals of germanium and silicon with different dopants
Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2016 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121522 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Features of tensoresistance in single crystals of germanium and silicon with different dopants / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 39-43. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862665873649565696 |
|---|---|
| author | Baranskii, P.I. Gaidar, G.P. |
| author_facet | Baranskii, P.I. Gaidar, G.P. |
| citation_txt | Features of tensoresistance in single crystals of germanium and silicon with different dopants / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 39-43. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper.
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| first_indexed | 2025-12-07T15:18:19Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121522 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:18:19Z |
| publishDate | 2016 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Baranskii, P.I. Gaidar, G.P. 2017-06-14T15:15:49Z 2017-06-14T15:15:49Z 2016 Features of tensoresistance in single crystals of germanium and silicon with different dopants / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 39-43. — Бібліогр.: 19 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.039 PACS 61.82.Fk https://nasplib.isofts.kiev.ua/handle/123456789/121522 Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Features of tensoresistance in single crystals of germanium and silicon with different dopants Article published earlier |
| spellingShingle | Features of tensoresistance in single crystals of germanium and silicon with different dopants Baranskii, P.I. Gaidar, G.P. |
| title | Features of tensoresistance in single crystals of germanium and silicon with different dopants |
| title_full | Features of tensoresistance in single crystals of germanium and silicon with different dopants |
| title_fullStr | Features of tensoresistance in single crystals of germanium and silicon with different dopants |
| title_full_unstemmed | Features of tensoresistance in single crystals of germanium and silicon with different dopants |
| title_short | Features of tensoresistance in single crystals of germanium and silicon with different dopants |
| title_sort | features of tensoresistance in single crystals of germanium and silicon with different dopants |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121522 |
| work_keys_str_mv | AT baranskiipi featuresoftensoresistanceinsinglecrystalsofgermaniumandsiliconwithdifferentdopants AT gaidargp featuresoftensoresistanceinsinglecrystalsofgermaniumandsiliconwithdifferentdopants |