Features of tensoresistance in single crystals of germanium and silicon with different dopants
Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2016 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121522 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Features of tensoresistance in single crystals of germanium and silicon with different dopants / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 39-43. — Бібліогр.: 19 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121522 |
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Baranskii, P.I. Gaidar, G.P. 2017-06-14T15:15:49Z 2017-06-14T15:15:49Z 2016 Features of tensoresistance in single crystals of germanium and silicon with different dopants / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 39-43. — Бібліогр.: 19 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.039 PACS 61.82.Fk https://nasplib.isofts.kiev.ua/handle/123456789/121522 Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Features of tensoresistance in single crystals of germanium and silicon with different dopants Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Features of tensoresistance in single crystals of germanium and silicon with different dopants |
| spellingShingle |
Features of tensoresistance in single crystals of germanium and silicon with different dopants Baranskii, P.I. Gaidar, G.P. |
| title_short |
Features of tensoresistance in single crystals of germanium and silicon with different dopants |
| title_full |
Features of tensoresistance in single crystals of germanium and silicon with different dopants |
| title_fullStr |
Features of tensoresistance in single crystals of germanium and silicon with different dopants |
| title_full_unstemmed |
Features of tensoresistance in single crystals of germanium and silicon with different dopants |
| title_sort |
features of tensoresistance in single crystals of germanium and silicon with different dopants |
| author |
Baranskii, P.I. Gaidar, G.P. |
| author_facet |
Baranskii, P.I. Gaidar, G.P. |
| publishDate |
2016 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121522 |
| citation_txt |
Features of tensoresistance in single crystals of germanium and silicon with different dopants / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 39-43. — Бібліогр.: 19 назв. — англ. |
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AT baranskiipi featuresoftensoresistanceinsinglecrystalsofgermaniumandsiliconwithdifferentdopants AT gaidargp featuresoftensoresistanceinsinglecrystalsofgermaniumandsiliconwithdifferentdopants |
| first_indexed |
2025-12-07T15:18:19Z |
| last_indexed |
2025-12-07T15:18:19Z |
| _version_ |
1850863202926067712 |