Features of tensoresistance in single crystals of germanium and silicon with different dopants

Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2016
Hauptverfasser: Baranskii, P.I., Gaidar, G.P.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121522
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Features of tensoresistance in single crystals of germanium and silicon with different dopants / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 39-43. — Бібліогр.: 19 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862665873649565696
author Baranskii, P.I.
Gaidar, G.P.
author_facet Baranskii, P.I.
Gaidar, G.P.
citation_txt Features of tensoresistance in single crystals of germanium and silicon with different dopants / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 39-43. — Бібліогр.: 19 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper.
first_indexed 2025-12-07T15:18:19Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-121522
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T15:18:19Z
publishDate 2016
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Baranskii, P.I.
Gaidar, G.P.
2017-06-14T15:15:49Z
2017-06-14T15:15:49Z
2016
Features of tensoresistance in single crystals of germanium and silicon with different dopants / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 39-43. — Бібліогр.: 19 назв. — англ.
1560-8034
DOI: 10.15407/spqeo19.01.039
PACS 61.82.Fk
https://nasplib.isofts.kiev.ua/handle/123456789/121522
Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Features of tensoresistance in single crystals of germanium and silicon with different dopants
Article
published earlier
spellingShingle Features of tensoresistance in single crystals of germanium and silicon with different dopants
Baranskii, P.I.
Gaidar, G.P.
title Features of tensoresistance in single crystals of germanium and silicon with different dopants
title_full Features of tensoresistance in single crystals of germanium and silicon with different dopants
title_fullStr Features of tensoresistance in single crystals of germanium and silicon with different dopants
title_full_unstemmed Features of tensoresistance in single crystals of germanium and silicon with different dopants
title_short Features of tensoresistance in single crystals of germanium and silicon with different dopants
title_sort features of tensoresistance in single crystals of germanium and silicon with different dopants
url https://nasplib.isofts.kiev.ua/handle/123456789/121522
work_keys_str_mv AT baranskiipi featuresoftensoresistanceinsinglecrystalsofgermaniumandsiliconwithdifferentdopants
AT gaidargp featuresoftensoresistanceinsinglecrystalsofgermaniumandsiliconwithdifferentdopants