Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface
Reported in this paper are the results of investigations aimed at scattering of conduction electrons at the tungsten (110) surface covered with hydrogen submonolayers, in which the effect of increasing the specularity of surface scattering of conduction electrons after formation the adsorption phase...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Цитувати: | Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface / S.V. Sologub, I.V. Bordenyuk, O.V. Kanash, R.H. Amirov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 52-56. — Бібліогр.: 11 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-1215242025-02-23T19:48:42Z Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface Sologub, S.V. Bordenyuk, I.V. Kanash, O.V. Amirov, R.H. Reported in this paper are the results of investigations aimed at scattering of conduction electrons at the tungsten (110) surface covered with hydrogen submonolayers, in which the effect of increasing the specularity of surface scattering of conduction electrons after formation the adsorption phase W(110)-(1×1)H has been confirmed. The monolayer coverage with hydrogen was formed as a result of the lowtemperature adsorption involving extrinsic precursor adsorption molecular states. The experiments were carried out using two techniques based on the classical galvanomagnetic size phenomena – the static skin effect and transverse magnetoresistance. It has allowed to confirm the surface nature of the observed effect. 2016 Article Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface / S.V. Sologub, I.V. Bordenyuk, O.V. Kanash, R.H. Amirov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 52-56. — Бібліогр.: 11 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.052 PACS 72.15.Gd, 72.30.+q https://nasplib.isofts.kiev.ua/handle/123456789/121524 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Reported in this paper are the results of investigations aimed at scattering of conduction electrons at the tungsten (110) surface covered with hydrogen submonolayers, in which the effect of increasing the specularity of surface scattering of conduction electrons after formation the adsorption phase W(110)-(1×1)H has been confirmed. The monolayer coverage with hydrogen was formed as a result of the lowtemperature adsorption involving extrinsic precursor adsorption molecular states. The experiments were carried out using two techniques based on the classical galvanomagnetic size phenomena – the static skin effect and transverse magnetoresistance. It has allowed to confirm the surface nature of the observed effect. |
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Article |
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Sologub, S.V. Bordenyuk, I.V. Kanash, O.V. Amirov, R.H. |
| spellingShingle |
Sologub, S.V. Bordenyuk, I.V. Kanash, O.V. Amirov, R.H. Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sologub, S.V. Bordenyuk, I.V. Kanash, O.V. Amirov, R.H. |
| author_sort |
Sologub, S.V. |
| title |
Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface |
| title_short |
Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface |
| title_full |
Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface |
| title_fullStr |
Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface |
| title_full_unstemmed |
Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface |
| title_sort |
increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the w(110) surface |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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2016 |
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https://nasplib.isofts.kiev.ua/handle/123456789/121524 |
| citation_txt |
Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface / S.V. Sologub, I.V. Bordenyuk, O.V. Kanash, R.H. Amirov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 52-56. — Бібліогр.: 11 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT sologubsv increasingthespecularityofsurfacescatteringofconductionelectronscausedbyadsorptionofahydrogenmonolayeronthew110surface AT bordenyukiv increasingthespecularityofsurfacescatteringofconductionelectronscausedbyadsorptionofahydrogenmonolayeronthew110surface AT kanashov increasingthespecularityofsurfacescatteringofconductionelectronscausedbyadsorptionofahydrogenmonolayeronthew110surface AT amirovrh increasingthespecularityofsurfacescatteringofconductionelectronscausedbyadsorptionofahydrogenmonolayeronthew110surface |
| first_indexed |
2025-11-24T18:44:16Z |
| last_indexed |
2025-11-24T18:44:16Z |
| _version_ |
1849698399789514752 |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 1. P. 52-56.
doi: 10.15407/spqeo19.01.052
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
52
PACS 72.15.Gd, 72.30.+q
Increasing the specularity of surface scattering
of conduction electrons caused by adsorption
of a hydrogen monolayer on the W(110) surface
S.V. Sologub, I.V. Bordenyuk, O.V. Kanash, R.H. Amirov
Institute of Physics, National Academy of Sciences of Ukraine
46, prospect Nauky, 03650 Kyiv, Ukraine, e-mail: sologub@iop.kiev.ua
Abstract. Reported in this paper are the results of investigations aimed at scattering of
conduction electrons at the tungsten (110) surface covered with hydrogen
submonolayers, in which the effect of increasing the specularity of surface scattering of
conduction electrons after formation the adsorption phase W(110)-(1×1)H has been
confirmed. The monolayer coverage with hydrogen was formed as a result of the low-
temperature adsorption involving extrinsic precursor adsorption molecular states. The
experiments were carried out using two techniques based on the classical galvano-
magnetic size phenomena – the static skin effect and transverse magnetoresistance. It has
allowed to confirm the surface nature of the observed effect.
Keywords: surface scattering of conduction electrons, surface electron states, adsorption,
static skin effect, transverse magnetoresistance.
Manuscript received 02.11.15; revised version received 22.01.16; accepted for
publication 16.03.16; published online 08.04.16.
1. Introduction
Electron transport in conductors with reduced dimension
is the base of functioning for many devices of
nanoelectronics and spintronics. In turn, the properties of
two surface phenomena – the surface scattering of
current carriers [1] and surface electron states [2], –
interacting between each other, create conditions for the
controlled manipulation of properties of low-dimensio-
nal systems. In particular, as it was shown in our pre-
vious investigations [3, 4], monolayer adsorption of hyd-
rogen on the tungsten and molybdenum (110) surfaces
increases the specularity of surface scattering of con-
duction electrons, which is related to transformation of
surface electron structure [5, 6]. In addition, the method
of static skin effect [7] applied in these experiments
facilitated increasing the influence of specularity of
surface scattering of conduction electrons on the
magnetoresistance (MS) of metal plates.
An opinion about impossibility of distinguishing
the contribution from surface and bulk electron states to
the conductivity of metal objects has been established in
the scientific literature [9]. In this paper, we demonstrate
that transformation of surface electron structure induced
by low-temperature adsorption blocks transitions
between surface and bulk electron states and thus allows
revealing the role of these surface states in the
conductance of low-dimensional metallic systems.
2. Experimental technique
The experiments were carried out in the ultra-high
vacuum (UHV) glass devices with a residual gas
pressure p ≤ 2×10–10 Torr. The devices with design
described in [7] were equipped with hydrogen sources,
pressure gauges and internal facilities for UHV
pumping. Cooling the samples with liquid helium was
carried out through the molybdenum leads passing
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 1. P. 52-56.
doi: 10.15407/spqeo19.01.052
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
53
through the glass of a device. The helium cryostat, in
which the device was inserted, contained a
superconducting magnet–solenoid and/or the
Helmholtz coils providing the orthogonal (relatively to
the sample surface directions) magnetic field
H ≤ 30 kOe.
Experimental samples were thin tungsten single
crystal plates with a typical size of 4×10 mm2 and a
thickness d ≈ 0.1 mm oriented in the W(110) plane so
that the long side of the sample corresponded to the
direction 〈100〉. They were prepared by the known
technology described in [7]. This technique along with
the UHV technology of decarbonization provide the
electron mean free path in the bulk of the plate
l4.2 K ~ 1 mm at T ≈ 4.2 K. Changing the sample
temperature, that was controlled using a thermocouple
WRe5%-WRe25%, was provided by electric current
flowing through it. Cleaning the surface before
deposition of adsorbates was performed with “flash”
heating up to T = 2300 K. Measurements of the
magnetoresistance (MS) of the plate was always carried
out at T ≈ 4.2 K using the four-point compensation
method.
Two classic galvanomagnetic size phenomena –
static skin effect (SSE) and transverse magnetoresistance
(TMR) – are the base of the applied experimental tech-
niques for studying the surface scattering of conduction
electrons [7]. Both effects are possible in ultra-pure
perfect crystalline metal plates at cryogenic temperatures
(d << l) in the classically strong magnetic field H
(ωcτ << 1); ωc is the cyclotron frequency for conduction
electrons in the field H, τ – relaxation time for electrons.
SSE is observed in a static magnetic field with the
directions H⊥n and H⊥j, where n – normal to the plate
surface, j – density of current flowing along the plates,
i.e. the magnetic field is parallel to the plate surface.
Under these conditions, (surface) scattering of current
carriers near the surface is more frequent than in the
bulk, and the electrical current concentrates near the
plate surface.
The magnitude of this current is determined by the
specularity of surface scattering, which is characterized
by the specularity parameter p – ratio of number of
electrons reflected specularly to their total number. For
providing the TMR conditions, another direction of the
constant magnetic field: H||n and H⊥j were used, i.e.,
the magnetic field was perpendicular to the plate surface.
In this case, current carriers move along spiral
trajectories between the plate surfaces. In the absence of
scattering in the bulk and the specular surface reflection
of carriers, the plate resistance tends to infinity. In the
case of diffuse surface scattering, displacement of axes
of spiral trajectories inherent to current carriers (the
trajectory 2 in the inset of Fig. 1b) occurs, which
contributes to the electric current. The trajectories of
movement of current carriers under the conditions of
SSE and TMR are schematically shown in the insets of
Figs 1a and 1b.
Fig. 1. Changes in the relative MR of the thin W(110) plate
caused by hydrogen adsorption at various temperatures
(currents) of the plate. a) SSE (H⊥n): 1 – 4.6 K (1.5 A),
2 – 9.8 K (6.0 A), 3 – 10.0 K (6.5 A) and 4 – 14.6 K (8.5 A).
b) TMR (H||n): 1 – 0.2 A, 2 – 1.5 A, 3 – 2.0 A (in this series of
measurements, the temperature is not recorded). In the experi-
ments (a) and (b) we used various samples, the deposition rate
of hydrogen was also different. R0 – MR value of the plates
with atomically clean surface. The insets show configuration of
experiments in the modes SSE (a) and TMR (b).
3. Results and discussion
Deposition of molecular hydrogen or molecular
deuterium on the surface of tungsten (molybdenum)
single crystals being under the conditions of SSE at
temperatures T ≈ 4.2 K leads to a bell-shaped change of
their magnetoresistance (MR) with reaching the plateau
at the end of the curve [7]. This behavior (Fig. 1a)
primarily reflects the initial increase in the diffusivity of
surface scattering of the conduction electrons of the
substrate caused by the increase in the number of
adsorbed atoms (adsorption is dissociative) that
randomly occupy adsorption sites to achieve the
coverage θ ≈ 0.5 monolayer (ML). Decreasing MR after
the maximum (Fig. 1a) reflects the decrease in
diffusivity of surface scattering caused by formation of
the partially ordered monolayer of adsorbate θ → 1,
which restores the natural symmetry of the substrate. In
the idealized model, due to equality of the surface
concentration of hydrogen adsorption sites and atoms in
the topmost layer of the substrate, the structure of
hydrogen monolayer lattice completely repeats the
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 1. P. 52-56.
doi: 10.15407/spqeo19.01.052
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
54
structure of the topmost layer of the W(110) surface. In
accordance with the diffraction concept of the surface
scattering of conduction electrons [8], it leads to high
specularity of scattering of current carriers on the surface
coated with the ideal adsorption phase W(110)-(1×1)H.
Since the height of the plateau at the end of the MC
curves (Fig. 1a) characterizes the specularity of
scattering of current carriers by this structure, this MR
value characterizes the degree of its ordering.
Fig. 1a also shows the change in MR of W(110)
plate due to adsorption of hydrogen measured at its va-
rious temperatures close to the temperature of liquid
helium. Increasing the adsorption temperature during
adsorption leads to the following changes in the MR
curves:
a) The maximum in the MR curves decreases [10].
It is associated with increasing scattering of conduction
electrons by phonons and therefore reduction of their
mean free path l in the bulk of W. In turn, under the SSE
condition it means increasing the conductivity of the
plate bulk and “shunting” the conductivity of the surface
region. Reducing l also leads to decrease in the near-
surface conductivity itself, the value of which represents
the degree of specularity of the surface scattering of
conduction electrons.
b) The width of the MR curves, more precisely, the
length of their falling part increases. It is related with the
mechanism of formation of the hydrogen monolayer
with participation of extrinsic precursor adsorption states
[7]. Before reaching coverage with hydrogen
θ ≈ 0.5 ML, atoms of hydrogen randomly fill the
adsorption sites on the W(110) surface. With increasing
the coverage, the probability of formation of two-
dimensional clusters of adatoms increases. On the
surface of these clusters, the hydrogen molecules can be
captured into the so-called extrinsic precursor adsorption
states (Fig. 2a). Diffusion of physadsorbed molecules to
the boundaries of clusters leads to dissociation of the
molecules on the bare tungsten surface and adsorption of
atoms in the nearest adsorption sites. Temperature
increasing leads to increasing the rate of molecular
diffusion, and hence, the increasing rate of formation of
monolayer atomic coverage with hydrogen. Neverthe-
less, further increasing the temperature reduces the
probability of capturing the molecules into precursor
states and results in slowing down W(110)-(1×1)H phase
formation. The latter process is manifested via
increasing the time of atomic monolayer formation with
increasing the temperature (Fig. 1a) (“tightening” the
descending part of the curves) [7].
c) The height of the MR plateau corresponding to
formation of hydrogen monolayer coverage decreases
with increasing the substrate temperature and, in the end,
the plateau falls down even lower than for the plate with
atomically clean surfaces. This result confirms the effect
that we observed earlier and which was induced by
formation of an ordered monolayer of hydrogen via
high-temperature (T = 200 – 300 K) annealing of
adsorbate films deposited up to saturation at T ≈ 4.2 K
on the surfaces W(110) [3] and Mo(110) [4].
The surface nature of this effect is confirmed by the
results of another series of experiments (Fig. 1b), in
which the influence of submonolayer adsorption of
hydrogen on MR of the W(110) plate being in the TMR
conditions (H||n) was studied. While maintaining the
basic qualitative peculiarities inherent to the curves in
Fig. 1a, the curves of Fig. 1b have the opposite sign of
effect and less absolute value. For clarity, we note that in
this series of experiments (Fig. 1b) the plate temperature
was not directly measured, and the hydrogen pressure
during deposition, apparently, was growing, as
evidenced by the “tightened” initial part of the curves
and their shape more “compressed” as compared to
Fig. 1a.
Fig. 2. a) model of dissociative adsorption of hydrogen with participation of extrinsic preadsorption states: hydrogen molecule
from the gas phase is captured into prestates on the surface of the island of adsorbed atoms, diffuses to the borders of the island
and dissociates with subsequent adsorption of atoms; b) two types of domains in a monolayer of hydrogen adsorbed on the W(110)
surface: large circles – tungsten, small ones – hydrogen; c) shadow projection of Fermi surface of tungsten bulk (filled area) and
the structure of the surface electronic states on W(110) surface [5]: solid lines – atomically clean surface, dashed lines – the
surface covered with ordered monolayer of hydrogen shown in (b).
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 1. P. 52-56.
doi: 10.15407/spqeo19.01.052
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
55
Under TMR conditions (Fig. 1b), the increase of
surface scattering due to increasing the concentration of
adsorbed hydrogen (0 ≤ θ ≤ 0.5 ML) leads to
displacement of axes of spiral orbits of electrons passing
between two surfaces of the plate (the inset in Fig. 1b),
and hence, to reduction of its resistance. Similarly, the
increase in specularity of surface scattering during
formation of the adsorbate monolayer (0.5 ≤ θ ≤ 1 ML)
leads to a decrease in the displacement of axes of spiral
electron orbits and increase of the resistance. However,
the most important (for this investigation) feature of the
curves in Fig. 1b is an increase of the MR at plateau,
corresponding to formation of hydrogen monolayer, to
the value higher than for the atomic clean surface, which
is manifested at elevated temperature (higher current) of
the substrate. This is the result of the same effect that
was observed under SSE conditions (Fig. 1a).
In two series of the experiments carried out under
the TMR and SSE conditions, the direction of the
magnetic field H differs by 90°, but the H direction is
always perpendicular to the direction of the current j,
flowing along the plate, i.e., 〈100〉 direction that is the
axis of 4-th order of the W single crystal. Therefore,
these two directions of the magnetic field are physically
equivalent for the properties of the W crystal bulk.
That’s why, a different sign of the effects that were
observed under the TMR and SSE conditions reflects the
change in surface properties, namely, change in the
character of the surface scattering of current carriers.
The dependences of Fig. 1b are “mirror image” of the
curves in Fig. 1a.
The physical picture of increasing the specularity
of conduction electrons scattering, which was caused by
monolayer hydrogen adsorption on the W(110), was
considered in our previous papers [3, 4]. To explain the
effect transformation of the surface electron structure of
atomically clean surface of W(110) plate induced by
adsorption of an ordered hydrogen monolayer, which
was measured by angle-resolved photoemission
spectroscopy method (Fig. 2c), should be considered [5,
6]. This figure shows a shadow projection of the Fermi
surface of bulk electron states of tungsten on the plane
(110) as well as projections of Fermi tubes (Fermi
contours) of surface electron states of atomically clean
and covered with hydrogen monolayer of the W(110)
surface. It is obvious that the hallmark of transformation
of the electron structure of the surface induced by
adsorption is the disappearance of one group of Fermi
contours that were superimposed on the projection of the
“bulk” part of the Fermi surface and “squeezing” the
another group of these contours beyond its boundaries of
the “bulk” part. Within the frame of the diffractional
concept [8], the scattering of the conduction electrons by
the metallic crystal surface occurs in accordance with the
conservation laws of energy ε and the tangential
component of the quasi-momentum kt:
kt′ = kt + ng, (1)
ε′(k) = ε(k) = εF, (2)
where εF – Fermi energy, n – an arbitrary integer, g – an
arbitrary vector of the reciprocal surface lattice, and
hatched and unhatched values correspond to the state of
electron before and after scattering. In accordance with
Eqs (1) and (2), overlapping projections of tungsten
Fermi surface (FS) parts, corresponding to bulk and
surface electron states, which is attributed to the
atomically clean W(110) surface, opens the channels for
transitions between these groups of electron states, and
these transitions can be realized during the surface
scattering of current carriers. In this case, the
conservation law of the tangential component of the
quasi-momentum (1) is valid for n = 0, the so-called
“vertical” transitions of current carriers occur, and the
conservation law for energy (2) is valid automatically,
since electrons of bulk and surface states are in thermo-
dynamical equilibrium and possess the Fermi energy
εF ± kBT, where kB is the Boltzmann constant.
The transitions between the surface and bulk
electron states strongly change the direction of the group
velocity of the conduction electrons. Transformation of
the surface electron structure caused by formation of the
W(110)-(1×1)H adsorption phase leads to a strong
reduction of the channels for transitions between the
surface and bulk electron states and, consequently,
increases the specularity of the surface scattering of
current carriers.
In conclusion, we note that the found effect is
observed on the background of the factors that increase
the surface scattering of electrons, particularly, different
scattering cross sections of conduction electrons by
tungsten atoms and hydrogen adatoms, shift the
hydrogen monolayer lattice relative to the surface lattice
of tungsten, as well as the presence of two types of
domains of adsorbed hydrogen in the W(110)-(1×1)H
surface phase, which provoke the scattering of
conduction electrons by the domain walls (Fig. 1b). It
means that the value of “pure” effect, in fact, is even
greater. In addition, we note that the lack of surface
reconstruction under the hydrogen adsorption on the
tungsten (110) surface also contributes to the
manifestation of this effect [11].
4. Conclusions
In the present study of scattering of conduction electrons
on atomically clean and covered with hydrogen
submonolayer W(110) surface, the effect of increasing
the specularity of surface scattering of conduction
electrons under formation of the W(110)-(1×1)H
adsorption phase has been confirmed. The reason of the
effect is in significant reduction of the transition
channels between the surface and bulk electron states as
a result of transformation of surface electron structure of
W(110), which was induced by monolayer adsorption of
hydrogen. Unlike our previous experiments [3, 4], in
which the monolayer coverage of hydrogen adatoms on
the W(110) surface was formed via high-temperature
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 1. P. 52-56.
doi: 10.15407/spqeo19.01.052
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
56
(T = 200 – 300 K) annealing of saturated hydrogen
coverage deposited at helium temperature, in these
experiments the adsorbate monolayer was formed via
low-temperature adsorption with participation of extrin-
sic precursor adsorption molecular states. Application in
the experiments of two methods based on the classic
galvanomagnetic size phenomena – static skin effect and
transverse magnetoresistance – made it possible to
confirm the surface nature of the observed effect.
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