Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2016
• ISSN: 1560-8034
• Main Authors: Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121526
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 62-66. — Бібліогр.: 14 назв. — англ.

Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigated. It has been shown that all DL spectra have the...