Analysis of the silicon solar cells efficiency. Type of doping and level optimization

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2016
• Hauptverfasser: Sachenko, A.V., Kostylyov, V.P., Gerasymenko, M.V., Korkishko, R.M., Kulish, M.R., Slipchenko, M.I., Sokolovskyi, I.O., Chernenko, V.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121527
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Analysis of the silicon solar cells efficiency. Type of doping and level optimization / A.V. Sachenko, V.P. Kostylyov, M.V. Gerasymenko, R.M. Korkishko, M.R. Kulish, M.I. Slipchenko, I.O. Sokolovskyi, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 67-74. — Бібліогр.: 14 назв. — англ.

The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley–Read–Hall recombination in the silicon bulk is determined by the deep level of Fe. It has shown th...