Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures

Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within the temperature range 100 to 200 K, and effect of residual conductivity after...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2016
Main Authors: Iliash, S.A., Kondratenko, S.V., Yakovliev, A.S., Kunets, Vas.P., Mazur, Yu.I., Salamo, G.J.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121528
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures / S.A. Iliash, S.V. Kondratenko, A.S. Yakovliev, Vas.P. Kunets, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 75-78. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Iliash, S.A.
Kondratenko, S.V.
Yakovliev, A.S.
Kunets, Vas.P.
Mazur, Yu.I.
Salamo, G.J.
author_facet Iliash, S.A.
Kondratenko, S.V.
Yakovliev, A.S.
Kunets, Vas.P.
Mazur, Yu.I.
Salamo, G.J.
citation_txt Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures / S.A. Iliash, S.V. Kondratenko, A.S. Yakovliev, Vas.P. Kunets, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 75-78. — Бібліогр.: 7 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within the temperature range 100 to 200 K, and effect of residual conductivity after turning-off the illumination. Analyzing the data of thermally stimulated conductivity, the following energies of electron traps were found: 90, 140, and 317 meV. The role of deep traps in recombination process as well as the photoconductivity mechanism was discussed.
first_indexed 2025-12-07T13:14:01Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T13:14:01Z
publishDate 2016
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Iliash, S.A.
Kondratenko, S.V.
Yakovliev, A.S.
Kunets, Vas.P.
Mazur, Yu.I.
Salamo, G.J.
2017-06-14T15:20:39Z
2017-06-14T15:20:39Z
2016
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures / S.A. Iliash, S.V. Kondratenko, A.S. Yakovliev, Vas.P. Kunets, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 75-78. — Бібліогр.: 7 назв. — англ.
1560-8034
DOI: 10.15407/spqeo19.01.075
PACS 72.40.+w, 73.40.-e, 73.63.Nm
https://nasplib.isofts.kiev.ua/handle/123456789/121528
Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within the temperature range 100 to 200 K, and effect of residual conductivity after turning-off the illumination. Analyzing the data of thermally stimulated conductivity, the following energies of electron traps were found: 90, 140, and 317 meV. The role of deep traps in recombination process as well as the photoconductivity mechanism was discussed.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
Article
published earlier
spellingShingle Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
Iliash, S.A.
Kondratenko, S.V.
Yakovliev, A.S.
Kunets, Vas.P.
Mazur, Yu.I.
Salamo, G.J.
title Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
title_full Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
title_fullStr Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
title_full_unstemmed Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
title_short Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
title_sort thermally stimulated conductivity in ingaas/gaas quantum wire heterostructures
url https://nasplib.isofts.kiev.ua/handle/123456789/121528
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AT kondratenkosv thermallystimulatedconductivityiningaasgaasquantumwireheterostructures
AT yakovlievas thermallystimulatedconductivityiningaasgaasquantumwireheterostructures
AT kunetsvasp thermallystimulatedconductivityiningaasgaasquantumwireheterostructures
AT mazuryui thermallystimulatedconductivityiningaasgaasquantumwireheterostructures
AT salamogj thermallystimulatedconductivityiningaasgaasquantumwireheterostructures