Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within the temperature range 100 to 200 K, and effect of residual conductivity after...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2016 |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121528 |
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| Zitieren: | Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures / S.A. Iliash, S.V. Kondratenko, A.S. Yakovliev, Vas.P. Kunets, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 75-78. — Бібліогр.: 7 назв. — англ. |
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Iliash, S.A. Kondratenko, S.V. Yakovliev, A.S. Kunets, Vas.P. Mazur, Yu.I. Salamo, G.J. 2017-06-14T15:20:39Z 2017-06-14T15:20:39Z 2016 Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures / S.A. Iliash, S.V. Kondratenko, A.S. Yakovliev, Vas.P. Kunets, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 75-78. — Бібліогр.: 7 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.075 PACS 72.40.+w, 73.40.-e, 73.63.Nm https://nasplib.isofts.kiev.ua/handle/123456789/121528 Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within the temperature range 100 to 200 K, and effect of residual conductivity after turning-off the illumination. Analyzing the data of thermally stimulated conductivity, the following energies of electron traps were found: 90, 140, and 317 meV. The role of deep traps in recombination process as well as the photoconductivity mechanism was discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures |
| spellingShingle |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures Iliash, S.A. Kondratenko, S.V. Yakovliev, A.S. Kunets, Vas.P. Mazur, Yu.I. Salamo, G.J. |
| title_short |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures |
| title_full |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures |
| title_fullStr |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures |
| title_full_unstemmed |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures |
| title_sort |
thermally stimulated conductivity in ingaas/gaas quantum wire heterostructures |
| author |
Iliash, S.A. Kondratenko, S.V. Yakovliev, A.S. Kunets, Vas.P. Mazur, Yu.I. Salamo, G.J. |
| author_facet |
Iliash, S.A. Kondratenko, S.V. Yakovliev, A.S. Kunets, Vas.P. Mazur, Yu.I. Salamo, G.J. |
| publishDate |
2016 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within the temperature range 100 to 200 K, and effect of residual conductivity after turning-off the illumination. Analyzing the data of thermally stimulated conductivity, the following energies of electron traps were found: 90, 140, and 317 meV. The role of deep traps in recombination process as well as the photoconductivity mechanism was discussed.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121528 |
| citation_txt |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures / S.A. Iliash, S.V. Kondratenko, A.S. Yakovliev, Vas.P. Kunets, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 75-78. — Бібліогр.: 7 назв. — англ. |
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| first_indexed |
2025-12-07T13:14:01Z |
| last_indexed |
2025-12-07T13:14:01Z |
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