The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures
In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide have been studied using the modular data acquisition setup for capacitance-volt...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2016 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121535 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures / V.A. Ievtukh, V.V. Ulyanov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 116-123. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862721697459732480 |
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| author | Ievtukh, V.A. Ulyanov, V.V. Nazarov, A.N. |
| author_facet | Ievtukh, V.A. Ulyanov, V.V. Nazarov, A.N. |
| citation_txt | The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures / V.A. Ievtukh, V.V. Ulyanov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 116-123. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide have been studied using the modular data acquisition setup for capacitance-voltage measurements. The memory window formation and memory window retention experimental methods were used with the aim to study the trapping/emission processes inside the dielectric layer of MOS capacitor memory within the defined range of elevated temperatures. The trap activation energy and charge localization were determined from measured temperature dependences of charge retention. The electric field dependence of the activation energy with subsequent charge emission law have been determined.
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| first_indexed | 2025-12-07T18:32:45Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121535 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:32:45Z |
| publishDate | 2016 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Ievtukh, V.A. Ulyanov, V.V. Nazarov, A.N. 2017-06-14T15:30:26Z 2017-06-14T15:30:26Z 2016 The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures / V.A. Ievtukh, V.V. Ulyanov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 116-123. — Бібліогр.: 9 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.116 PACS 73.50.Gr, 84.32.Tt, 85.30.Tv https://nasplib.isofts.kiev.ua/handle/123456789/121535 In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide have been studied using the modular data acquisition setup for capacitance-voltage measurements. The memory window formation and memory window retention experimental methods were used with the aim to study the trapping/emission processes inside the dielectric layer of MOS capacitor memory within the defined range of elevated temperatures. The trap activation energy and charge localization were determined from measured temperature dependences of charge retention. The electric field dependence of the activation energy with subsequent charge emission law have been determined. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures Article published earlier |
| spellingShingle | The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures Ievtukh, V.A. Ulyanov, V.V. Nazarov, A.N. |
| title | The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures |
| title_full | The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures |
| title_fullStr | The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures |
| title_full_unstemmed | The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures |
| title_short | The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures |
| title_sort | charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121535 |
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