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The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures

In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide have been studied using the modular data acquisition setup for capacitance-volt...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2016
Hauptverfasser: Ievtukh, V.A., Ulyanov, V.V., Nazarov, A.N.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121535
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures / V.A. Ievtukh, V.V. Ulyanov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 116-123. — Бібліогр.: 9 назв. — англ.

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