Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model
Some electronic, thermodynamical and mechanical properties of Si1-xGex solid solution with an arbitrary (atomic) concentration (x) are studied using the pseudo-alloy atom model. This work is based on the pseudopotential theory of covalent crystals and on the higher-order perturbation scheme with the...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2005 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121544 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model / A.R. Jivani, H.J. Trivedi, P.N. Gajjar, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 14-17. — Бібліогр.: 21 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862683604561166336 |
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| author | Jivani, A.R. Trivedi, H.J. Gajjar, P.N. Jani, A.R. |
| author_facet | Jivani, A.R. Trivedi, H.J. Gajjar, P.N. Jani, A.R. |
| citation_txt | Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model / A.R. Jivani, H.J. Trivedi, P.N. Gajjar, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 14-17. — Бібліогр.: 21 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Some electronic, thermodynamical and mechanical properties of Si1-xGex solid solution with an arbitrary (atomic) concentration (x) are studied using the pseudo-alloy atom model. This work is based on the pseudopotential theory of covalent crystals and on the higher-order perturbation scheme with the application of our proposed model potential. We have used the latest local field correction function proposed by Sarkar et al. alongwith other four local-field correction functions of Hartree, Taylor, Utsumi et al. and Farid et al. to study Si-Ge system. The total energy of the Si1-xGex solid solutions is investigated and compared with available experimental data. The calculated numerical values of the heat of solution for Si-Ge system are small and positive. The positive sign of the heat of solution predicts that, at low temperatures, the phase mixture will be more stable than the disordered solid solution. Like the case of simple metals, it is seen that a graph of the ratio of the heat of formations and x(1−x) against x is linear. The bulk modulus of Si1-xGex is also investigated with different concentrations x of Ge. We have found in the present study that the bulk modulus decreases linearly with an increase in the concentration x.
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| first_indexed | 2025-12-07T15:56:35Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121544 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:56:35Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| spelling | Jivani, A.R. Trivedi, H.J. Gajjar, P.N. Jani, A.R. 2017-06-14T16:07:52Z 2017-06-14T16:07:52Z 2005 Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model / A.R. Jivani, H.J. Trivedi, P.N. Gajjar, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 14-17. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS 62.20.Dc, 71.15.Dx, 71.15H, 71.25T, 71.45N https://nasplib.isofts.kiev.ua/handle/123456789/121544 Some electronic, thermodynamical and mechanical properties of Si1-xGex solid solution with an arbitrary (atomic) concentration (x) are studied using the pseudo-alloy atom model. This work is based on the pseudopotential theory of covalent crystals and on the higher-order perturbation scheme with the application of our proposed model potential. We have used the latest local field correction function proposed by Sarkar et al. alongwith other four local-field correction functions of Hartree, Taylor, Utsumi et al. and Farid et al. to study Si-Ge system. The total energy of the Si1-xGex solid solutions is investigated and compared with available experimental data. The calculated numerical values of the heat of solution for Si-Ge system are small and positive. The positive sign of the heat of solution predicts that, at low temperatures, the phase mixture will be more stable than the disordered solid solution. Like the case of simple metals, it is seen that a graph of the ratio of the heat of formations and x(1−x) against x is linear. The bulk modulus of Si1-xGex is also investigated with different concentrations x of Ge. We have found in the present study that the bulk modulus decreases linearly with an increase in the concentration x. We acknowledge the financial support of University
 Grand Commission, New Delhi. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model Article published earlier |
| spellingShingle | Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model Jivani, A.R. Trivedi, H.J. Gajjar, P.N. Jani, A.R. |
| title | Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model |
| title_full | Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model |
| title_fullStr | Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model |
| title_full_unstemmed | Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model |
| title_short | Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model |
| title_sort | some physical properties of si₁₋xgex solid solutions using pseudo-alloy atom model |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121544 |
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