Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2005
• Hauptverfasser: Jivani, A.R., Trivedi, H.J., Gajjar, P.N., Jani, A.R.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121544
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model / A.R. Jivani, H.J. Trivedi, P.N. Gajjar, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 14-17. — Бібліогр.: 21 назв. — англ.

Some electronic, thermodynamical and mechanical properties of Si1-xGex solid solution with an arbitrary (atomic) concentration (x) are studied using the pseudo-alloy atom model. This work is based on the pseudopotential theory of covalent crystals and on the higher-order perturbation scheme with the...