Investigation of cadmium telluride films on silicon substrate

Properties of cadmium telluride films on silicon substrate, distribution of thickness and refraction index over the sample area were investigated by the ellipsometric method. It was ascertained that the refraction index of cadmium telluride films on a silicon substrate was considerably less than tha...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2005
Автори: Odarych, V.A., Sarsembaeva, A.Z., Sizov, F.F., Vuichyk, M.V.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121545
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Investigation of cadmium telluride films on silicon substrate / V.A. Odarych, A.Z. Sarsembaeva, F.F. Sizov, M.V. Vuichyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 55-59. — Бібліогр.: 7 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Odarych, V.A.
Sarsembaeva, A.Z.
Sizov, F.F.
Vuichyk, M.V.
author_facet Odarych, V.A.
Sarsembaeva, A.Z.
Sizov, F.F.
Vuichyk, M.V.
citation_txt Investigation of cadmium telluride films on silicon substrate / V.A. Odarych, A.Z. Sarsembaeva, F.F. Sizov, M.V. Vuichyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 55-59. — Бібліогр.: 7 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Properties of cadmium telluride films on silicon substrate, distribution of thickness and refraction index over the sample area were investigated by the ellipsometric method. It was ascertained that the refraction index of cadmium telluride films on a silicon substrate was considerably less than that of monocrystalline CdTe and depends on the film thickness, increasing with the thickness growth.
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language English
last_indexed 2025-11-26T00:08:27Z
publishDate 2005
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Odarych, V.A.
Sarsembaeva, A.Z.
Sizov, F.F.
Vuichyk, M.V.
2017-06-14T16:10:13Z
2017-06-14T16:10:13Z
2005
Investigation of cadmium telluride films on silicon substrate / V.A. Odarych, A.Z. Sarsembaeva, F.F. Sizov, M.V. Vuichyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 55-59. — Бібліогр.: 7 назв. — англ.
1560-8034
PACS 68.35.-p, 73.20.-r
https://nasplib.isofts.kiev.ua/handle/123456789/121545
Properties of cadmium telluride films on silicon substrate, distribution of thickness and refraction index over the sample area were investigated by the ellipsometric method. It was ascertained that the refraction index of cadmium telluride films on a silicon substrate was considerably less than that of monocrystalline CdTe and depends on the film thickness, increasing with the thickness growth.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Investigation of cadmium telluride films on silicon substrate
Article
published earlier
spellingShingle Investigation of cadmium telluride films on silicon substrate
Odarych, V.A.
Sarsembaeva, A.Z.
Sizov, F.F.
Vuichyk, M.V.
title Investigation of cadmium telluride films on silicon substrate
title_full Investigation of cadmium telluride films on silicon substrate
title_fullStr Investigation of cadmium telluride films on silicon substrate
title_full_unstemmed Investigation of cadmium telluride films on silicon substrate
title_short Investigation of cadmium telluride films on silicon substrate
title_sort investigation of cadmium telluride films on silicon substrate
url https://nasplib.isofts.kiev.ua/handle/123456789/121545
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AT sizovff investigationofcadmiumtelluridefilmsonsiliconsubstrate
AT vuichykmv investigationofcadmiumtelluridefilmsonsiliconsubstrate