Electron states at the Si–SiO₂ boundary (Review)

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2005
• Hauptverfasser: Primachenko, V.E., Kirillova, S.I., Venger, E.F., Chernobai, V.A.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121546
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Electron states at the Si–SiO₂ boundary (Review) / V.E. Primachenko, S.I. Kirillova, V.A. Chernobai, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 38-54. — Бібліогр.: 95 назв. — англ.

This review is aimed at analysis of the system of discrete and continuously distributed boundary electron states (BES) on (111) and (100) silicon surfaces in the Si-SiO₂ structures prepared mainly using thermal oxidation of silicon. Used here are literature data as well as results obtained by author...