Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice
The binding energy of shallow hydrogenic impurity in GaAs-GaAs-Ga₁₋xAlxAs superlattices, under the influence of magnetic field, is theoretically studied following a variational procedure within the effective-mass approximation and the new analytic wave function of superlattice. The binding energy is...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2005 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121547 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice / D. Abouelaoualim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 18-21. — Бібліогр.: 31 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121547 |
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Abouelaoualim, D. 2017-06-14T16:14:41Z 2017-06-14T16:14:41Z 2005 Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice / D. Abouelaoualim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 18-21. — Бібліогр.: 31 назв. — англ. 1560-8034 PACS: 68.65.Cd, 75.70.Cn, 75.30.Hx, 31.15.pf, 61.72.Ss, 71.55.Eq https://nasplib.isofts.kiev.ua/handle/123456789/121547 The binding energy of shallow hydrogenic impurity in GaAs-GaAs-Ga₁₋xAlxAs superlattices, under the influence of magnetic field, is theoretically studied following a variational procedure within the effective-mass approximation and the new analytic wave function of superlattice. The binding energy is calculed and analyzed for various applied magnetic field, different impurity position and superlattice with different widths. The result show that the impurity binding energy depends strongly on the impurity position and magnetic field. It is also found that for impurities located at the center of the quantum wells of superlattices the binding energy always increases with the applied magnetic field. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice |
| spellingShingle |
Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice Abouelaoualim, D. |
| title_short |
Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice |
| title_full |
Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice |
| title_fullStr |
Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice |
| title_full_unstemmed |
Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice |
| title_sort |
magnetic field effect on the binding energy of a hydrogenic impurity in gaas-ga₁₋xalxas superlattice |
| author |
Abouelaoualim, D. |
| author_facet |
Abouelaoualim, D. |
| publishDate |
2005 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The binding energy of shallow hydrogenic impurity in GaAs-GaAs-Ga₁₋xAlxAs superlattices, under the influence of magnetic field, is theoretically studied following a variational procedure within the effective-mass approximation and the new analytic wave function of superlattice. The binding energy is calculed and analyzed for various applied magnetic field, different impurity position and superlattice with different widths. The result show that the impurity binding energy depends strongly on the impurity position and magnetic field. It is also found that for impurities located at the center of the quantum wells of superlattices the binding energy always increases with the applied magnetic field.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121547 |
| citation_txt |
Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice / D. Abouelaoualim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 18-21. — Бібліогр.: 31 назв. — англ. |
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| first_indexed |
2025-12-07T15:14:09Z |
| last_indexed |
2025-12-07T15:14:09Z |
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1850862940186476544 |