Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2005
• 1. Verfasser: Abouelaoualim, D.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121547
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice / D. Abouelaoualim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 18-21. — Бібліогр.: 31 назв. — англ.

The binding energy of shallow hydrogenic impurity in GaAs-GaAs-Ga₁₋xAlxAs superlattices, under the influence of magnetic field, is theoretically studied following a variational procedure within the effective-mass approximation and the new analytic wave function of superlattice. The binding energy is...