Performance limits of terahertz zero biased rectifying detectors for direct detection
Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance mat...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2016 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121551 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Performance limits of terahertz zero biased rectifying detectors for direct detection / A.G. Golenkov, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 129-138. — Бібліогр.: 53 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862670795606589440 |
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| author | Golenkov, A.G. Sizov, F.F. |
| author_facet | Golenkov, A.G. Sizov, F.F. |
| citation_txt | Performance limits of terahertz zero biased rectifying detectors for direct detection / A.G. Golenkov, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 129-138. — Бібліогр.: 53 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance matching were taken into account. It has been concluded that, in dependence on radiation frequency, detector and antenna parameters, the ultimate optical responsivity (ℜopt) and optical noise equivalent power (NEPopt) of FETs in the broadband detection regime can achieve ℜopt ~ 23 kV/W and NEPopt ~ 1⋅10⁻¹² W/Hz¹/², respectively. At low radiation frequency ν in the THz spectral region the NEPopt of SBD detectors can be better by a factor of ~1.75 as compared to that of Si MOSFETs (metal oxide semiconductor FETs) and GaAlN/GaN HFETs (heterojunction FETs) with comparable device impedances.
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| first_indexed | 2025-12-07T15:32:14Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121551 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:32:14Z |
| publishDate | 2016 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Golenkov, A.G. Sizov, F.F. 2017-06-14T16:39:01Z 2017-06-14T16:39:01Z 2016 Performance limits of terahertz zero biased rectifying detectors for direct detection / A.G. Golenkov, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 129-138. — Бібліогр.: 53 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.02.129 PACS 07.57.Kp, 73.40.-c, 85.30.Tv https://nasplib.isofts.kiev.ua/handle/123456789/121551 Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance matching were taken into account. It has been concluded that, in dependence on radiation frequency, detector and antenna parameters, the ultimate optical responsivity (ℜopt) and optical noise equivalent power (NEPopt) of FETs in the broadband detection regime can achieve ℜopt ~ 23 kV/W and NEPopt ~ 1⋅10⁻¹² W/Hz¹/², respectively. At low radiation frequency ν in the THz spectral region the NEPopt of SBD detectors can be better by a factor of ~1.75 as compared to that of Si MOSFETs (metal oxide semiconductor FETs) and GaAlN/GaN HFETs (heterojunction FETs) with comparable device impedances. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Performance limits of terahertz zero biased rectifying detectors for direct detection Article published earlier |
| spellingShingle | Performance limits of terahertz zero biased rectifying detectors for direct detection Golenkov, A.G. Sizov, F.F. |
| title | Performance limits of terahertz zero biased rectifying detectors for direct detection |
| title_full | Performance limits of terahertz zero biased rectifying detectors for direct detection |
| title_fullStr | Performance limits of terahertz zero biased rectifying detectors for direct detection |
| title_full_unstemmed | Performance limits of terahertz zero biased rectifying detectors for direct detection |
| title_short | Performance limits of terahertz zero biased rectifying detectors for direct detection |
| title_sort | performance limits of terahertz zero biased rectifying detectors for direct detection |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121551 |
| work_keys_str_mv | AT golenkovag performancelimitsofterahertzzerobiasedrectifyingdetectorsfordirectdetection AT sizovff performancelimitsofterahertzzerobiasedrectifyingdetectorsfordirectdetection |