Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern

Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub-terahertz direct detection bolometers and 3...10...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2016
Main Authors: Sizov, F.F., Tsybrii, Z.F., Zabudsky, V.V., Sakhno, M.V., Shevchik-Shekera, A.V., Dukhnin, S.Ye., Golenkov, A.G., Dieguez, E., Dvoretsky, S.A.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121553
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern / F.F. Sizov, Z.F. Tsybrii, V.V. Zabudsky, M.V. Sakhno, A.V. Shevchik-Shekera, S.Ye. Dukhnin, A.G. Golenkov, E. Dieguez, S.A. Dvoretsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 149-155. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Sizov, F.F.
Tsybrii, Z.F.
Zabudsky, V.V.
Sakhno, M.V.
Shevchik-Shekera, A.V.
Dukhnin, S.Ye.
Golenkov, A.G.
Dieguez, E.
Dvoretsky, S.A.
author_facet Sizov, F.F.
Tsybrii, Z.F.
Zabudsky, V.V.
Sakhno, M.V.
Shevchik-Shekera, A.V.
Dukhnin, S.Ye.
Golenkov, A.G.
Dieguez, E.
Dvoretsky, S.A.
citation_txt Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern / F.F. Sizov, Z.F. Tsybrii, V.V. Zabudsky, M.V. Sakhno, A.V. Shevchik-Shekera, S.Ye. Dukhnin, A.G. Golenkov, E. Dieguez, S.A. Dvoretsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 149-155. — Бібліогр.: 10 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub-terahertz direct detection bolometers and 3...10-micrometer infrared photoconductors. Optical system with aspheric THz lenses were designed and manufactured. An antenna pattern of structures on the thick substrate was discussed, and sensitivity of detector in both IR and sub-THz regions was measured.
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language English
last_indexed 2025-12-07T15:32:15Z
publishDate 2016
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Sizov, F.F.
Tsybrii, Z.F.
Zabudsky, V.V.
Sakhno, M.V.
Shevchik-Shekera, A.V.
Dukhnin, S.Ye.
Golenkov, A.G.
Dieguez, E.
Dvoretsky, S.A.
2017-06-14T16:41:12Z
2017-06-14T16:41:12Z
2016
Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern / F.F. Sizov, Z.F. Tsybrii, V.V. Zabudsky, M.V. Sakhno, A.V. Shevchik-Shekera, S.Ye. Dukhnin, A.G. Golenkov, E. Dieguez, S.A. Dvoretsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 149-155. — Бібліогр.: 10 назв. — англ.
1560-8034
DOI: 10.15407/spqeo19.02.149
PACS 07.57.Kp, 07.57.Kp, 85.25.Pb
https://nasplib.isofts.kiev.ua/handle/123456789/121553
Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub-terahertz direct detection bolometers and 3...10-micrometer infrared photoconductors. Optical system with aspheric THz lenses were designed and manufactured. An antenna pattern of structures on the thick substrate was discussed, and sensitivity of detector in both IR and sub-THz regions was measured.
This work was supported by NATO Project NUKR.SFP 984544.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern
Article
published earlier
spellingShingle Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern
Sizov, F.F.
Tsybrii, Z.F.
Zabudsky, V.V.
Sakhno, M.V.
Shevchik-Shekera, A.V.
Dukhnin, S.Ye.
Golenkov, A.G.
Dieguez, E.
Dvoretsky, S.A.
title Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern
title_full Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern
title_fullStr Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern
title_full_unstemmed Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern
title_short Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern
title_sort detection of ir and sub/thz radiation using mct thin layer structures: design of the chip, optical elements and antenna pattern
url https://nasplib.isofts.kiev.ua/handle/123456789/121553
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