Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis
The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the 44−59 GHz (first harmonic) and 101−104 GHz (second harmonic) frequency ranges....
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2005 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis / A.E. Belyaev, A.V. Bobyl, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, S.G. Konnikov, Ya.Ya. Kudryk, E.P. Markovskiy, V.V. Milenin, E.M. Rudenko, G.F. Tereschenko, V.P. Ulin, V.M. Ustinov, G.E. Tsirlin, A.P. Shpak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 65-71. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862636740965040128 |
|---|---|
| author | Belyaev, A.E. Bobyl, A.V. Boltovets, N.S. Ivanov, V.N. Konakova, R.V. Konnikov, S.G. Kudryk, Ya.Ya. Markovskiy, E.P. Milenin, V.V. Rudenko, E.M. Tereschenko, G.F. Ulin, V.P. Ustinov, V.M. Tsirlin, G.E. Shpak, A.P. |
| author_facet | Belyaev, A.E. Bobyl, A.V. Boltovets, N.S. Ivanov, V.N. Konakova, R.V. Konnikov, S.G. Kudryk, Ya.Ya. Markovskiy, E.P. Milenin, V.V. Rudenko, E.M. Tereschenko, G.F. Ulin, V.P. Ustinov, V.M. Tsirlin, G.E. Shpak, A.P. |
| citation_txt | Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis / A.E. Belyaev, A.V. Bobyl, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, S.G. Konnikov, Ya.Ya. Kudryk, E.P. Markovskiy, V.V. Milenin, E.M. Rudenko, G.F. Tereschenko, V.P. Ulin, V.M. Ustinov, G.E. Tsirlin, A.P. Shpak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 65-71. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the 44−59 GHz (first harmonic) and 101−104 GHz (second harmonic) frequency ranges. For both harmonics, the power output of the Gunn diodes grown on porous substrates was shown to be from 20 to 30 % higher than those grown on the flat ones.
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| first_indexed | 2025-11-30T21:56:38Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121562 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T21:56:38Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Belyaev, A.E. Bobyl, A.V. Boltovets, N.S. Ivanov, V.N. Konakova, R.V. Konnikov, S.G. Kudryk, Ya.Ya. Markovskiy, E.P. Milenin, V.V. Rudenko, E.M. Tereschenko, G.F. Ulin, V.P. Ustinov, V.M. Tsirlin, G.E. Shpak, A.P. 2017-06-14T16:46:32Z 2017-06-14T16:46:32Z 2005 Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis / A.E. Belyaev, A.V. Bobyl, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, S.G. Konnikov, Ya.Ya. Kudryk, E.P. Markovskiy, V.V. Milenin, E.M. Rudenko, G.F. Tereschenko, V.P. Ulin, V.M. Ustinov, G.E. Tsirlin, A.P. Shpak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 65-71. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 68.55.Ac, 81.15.-z, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/121562 The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the 44−59 GHz (first harmonic) and 101−104 GHz (second harmonic) frequency ranges. For both harmonics, the power output of the Gunn diodes grown on porous substrates was shown to be from 20 to 30 % higher than those grown on the flat ones. This work was performed in the framework of the
 Russian-Ukrainian Program on Nanophysics and
 Nanoelectronics. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis Article published earlier |
| spellingShingle | Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis Belyaev, A.E. Bobyl, A.V. Boltovets, N.S. Ivanov, V.N. Konakova, R.V. Konnikov, S.G. Kudryk, Ya.Ya. Markovskiy, E.P. Milenin, V.V. Rudenko, E.M. Tereschenko, G.F. Ulin, V.P. Ustinov, V.M. Tsirlin, G.E. Shpak, A.P. |
| title | Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis |
| title_full | Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis |
| title_fullStr | Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis |
| title_full_unstemmed | Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis |
| title_short | Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis |
| title_sort | novel technological possibilities for growth of gaas autoepitaxial films, and properties of gunn diodes made on their basis |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121562 |
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