ZnTe-based UV sensors
A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTebased UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal evaporation and quasiclosed space condensation. A transparent current collecting ele...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2016 |
| Main Authors: | Pavelets, S.Yu., Bobrenko, Yu.N., Semikina, T.V., Sheremetova, G.I., Atdaiev, В.S., Krulikovska, K.B., Mazin, M.A. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121564 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | ZnTe-based UV sensors / S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, G.I. Sheremetova, В.S. Atdaiev, K.B. Krulikovska, M.S. Mazin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 197-200. — Бібліогр.: 11 назв. — англ. |
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