Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells
The possibility to change the spatial character of the Wannier exciton ground state in a wide single type-II semiconductor quantum well has been studied variationally. A heterostructure with the central layer forming a potential well for holes and a barrier for electrons has been considered. A trial...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2016 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121566 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells / G.V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 208-214. — Бібліогр.: 24 назв. — англ. |