Electron properties of semiconductor surface studied by the electroreflectance spectroscopy method

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2005
• Main Authors: Gentsar, P.A., Vlasenko, A.I., Kudryavtsev, A.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121570
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Electron properties of semiconductor surface studied by the electroreflectance spectroscopy method / P.A. Gentsar, A.I. Vlasenko, A.A. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 85-90. — Бібліогр.: 16 назв. — англ.

Relations between the Keldysh-Franz oscillations with electron parameters of semiconductor materials were used to derive qualitative data for homoepitaxial films n-GaAs (100) from their electroreflectance spectra. The spectra were measured using the Shottky barrier method at the temperature 300 K an...