Porous nanostructured InP: technology, properties, application

Porous nanostructured InP: technology, properties, application

We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP epilayers grown on them were studied. These InP epilayers grown on the porous and...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2005
Hauptverfasser: Arsentyev, I. N., Bobyl, A.B., Konnikov, S.G., Tarasov, I.S., Ulin, V.P, Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Belyaev, A.E., Konakova, R.V., Kudryk, Ya.Ya., Kamalov, A.B., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V., Red’ko, R.A.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121572
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Porous nanostructured InP: technology, properties, application / I. N. Arsentyev, A.B. Bobyl, S.G. Konnikov, I.S. Tarasov, V.P Ulin, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudryk, A.B. Kamalov, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 95-104. — Бібліогр.: 18 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121572
record_format dspace
spelling Arsentyev, I. N.
Bobyl, A.B.
Konnikov, S.G.
Tarasov, I.S.
Ulin, V.P
Shishkov, M.V.
Boltovets, N.S.
Ivanov, V.N.
Belyaev, A.E.
Konakova, R.V.
Kudryk, Ya.Ya.
Kamalov, A.B.
Lytvyn, P.M.
Markovskiy, E.P.
Milenin, V.V.
Red’ko, R.A.
2017-06-14T16:55:09Z
2017-06-14T16:55:09Z
2005
Porous nanostructured InP: technology, properties, application / I. N. Arsentyev, A.B. Bobyl, S.G. Konnikov, I.S. Tarasov, V.P Ulin, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudryk, A.B. Kamalov, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 95-104. — Бібліогр.: 18 назв. — англ.
1560-8034
PACS 81.05.Rm
https://nasplib.isofts.kiev.ua/handle/123456789/121572
We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP epilayers grown on them were studied. These InP epilayers grown on the porous and standard InP substrates were used to make microwave diodes. We showed the advantages of the diodes made on the porous substrates (over those made on the standard ones) caused by higher structural perfection of the InP epilayers grown on the porous substrates.
The work was made in the framework of the Russia−Ukraine Program on Nanophysics and Nanoelectronics.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Porous nanostructured InP: technology, properties, application
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Porous nanostructured InP: technology, properties, application
spellingShingle Porous nanostructured InP: technology, properties, application
Arsentyev, I. N.
Bobyl, A.B.
Konnikov, S.G.
Tarasov, I.S.
Ulin, V.P
Shishkov, M.V.
Boltovets, N.S.
Ivanov, V.N.
Belyaev, A.E.
Konakova, R.V.
Kudryk, Ya.Ya.
Kamalov, A.B.
Lytvyn, P.M.
Markovskiy, E.P.
Milenin, V.V.
Red’ko, R.A.
title_short Porous nanostructured InP: technology, properties, application
title_full Porous nanostructured InP: technology, properties, application
title_fullStr Porous nanostructured InP: technology, properties, application
title_full_unstemmed Porous nanostructured InP: technology, properties, application
title_sort porous nanostructured inp: technology, properties, application
author Arsentyev, I. N.
Bobyl, A.B.
Konnikov, S.G.
Tarasov, I.S.
Ulin, V.P
Shishkov, M.V.
Boltovets, N.S.
Ivanov, V.N.
Belyaev, A.E.
Konakova, R.V.
Kudryk, Ya.Ya.
Kamalov, A.B.
Lytvyn, P.M.
Markovskiy, E.P.
Milenin, V.V.
Red’ko, R.A.
author_facet Arsentyev, I. N.
Bobyl, A.B.
Konnikov, S.G.
Tarasov, I.S.
Ulin, V.P
Shishkov, M.V.
Boltovets, N.S.
Ivanov, V.N.
Belyaev, A.E.
Konakova, R.V.
Kudryk, Ya.Ya.
Kamalov, A.B.
Lytvyn, P.M.
Markovskiy, E.P.
Milenin, V.V.
Red’ko, R.A.
publishDate 2005
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP epilayers grown on them were studied. These InP epilayers grown on the porous and standard InP substrates were used to make microwave diodes. We showed the advantages of the diodes made on the porous substrates (over those made on the standard ones) caused by higher structural perfection of the InP epilayers grown on the porous substrates.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121572
citation_txt Porous nanostructured InP: technology, properties, application / I. N. Arsentyev, A.B. Bobyl, S.G. Konnikov, I.S. Tarasov, V.P Ulin, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudryk, A.B. Kamalov, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 95-104. — Бібліогр.: 18 назв. — англ.
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first_indexed 2025-12-07T20:08:00Z
last_indexed 2025-12-07T20:08:00Z
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