Porous nanostructured InP: technology, properties, application
We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP epilayers grown on them were studied. These InP epilayers grown on the porous and...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2005 |
| Автори: | , , , , , , , , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121572 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Porous nanostructured InP: technology, properties, application / I. N. Arsentyev, A.B. Bobyl, S.G. Konnikov, I.S. Tarasov, V.P Ulin, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudryk, A.B. Kamalov, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 95-104. — Бібліогр.: 18 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862739169543979008 |
|---|---|
| author | Arsentyev, I. N. Bobyl, A.B. Konnikov, S.G. Tarasov, I.S. Ulin, V.P Shishkov, M.V. Boltovets, N.S. Ivanov, V.N. Belyaev, A.E. Konakova, R.V. Kudryk, Ya.Ya. Kamalov, A.B. Lytvyn, P.M. Markovskiy, E.P. Milenin, V.V. Red’ko, R.A. |
| author_facet | Arsentyev, I. N. Bobyl, A.B. Konnikov, S.G. Tarasov, I.S. Ulin, V.P Shishkov, M.V. Boltovets, N.S. Ivanov, V.N. Belyaev, A.E. Konakova, R.V. Kudryk, Ya.Ya. Kamalov, A.B. Lytvyn, P.M. Markovskiy, E.P. Milenin, V.V. Red’ko, R.A. |
| citation_txt | Porous nanostructured InP: technology, properties, application / I. N. Arsentyev, A.B. Bobyl, S.G. Konnikov, I.S. Tarasov, V.P Ulin, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudryk, A.B. Kamalov, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 95-104. — Бібліогр.: 18 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP epilayers grown on them were studied. These InP epilayers grown on the porous and standard InP substrates were used to make microwave diodes. We showed the advantages of the diodes made on the porous substrates (over those made on the standard ones) caused by higher structural perfection of the InP epilayers grown on the porous substrates.
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| first_indexed | 2025-12-07T20:08:00Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121572 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:08:00Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Arsentyev, I. N. Bobyl, A.B. Konnikov, S.G. Tarasov, I.S. Ulin, V.P Shishkov, M.V. Boltovets, N.S. Ivanov, V.N. Belyaev, A.E. Konakova, R.V. Kudryk, Ya.Ya. Kamalov, A.B. Lytvyn, P.M. Markovskiy, E.P. Milenin, V.V. Red’ko, R.A. 2017-06-14T16:55:09Z 2017-06-14T16:55:09Z 2005 Porous nanostructured InP: technology, properties, application / I. N. Arsentyev, A.B. Bobyl, S.G. Konnikov, I.S. Tarasov, V.P Ulin, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudryk, A.B. Kamalov, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 95-104. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 81.05.Rm https://nasplib.isofts.kiev.ua/handle/123456789/121572 We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP epilayers grown on them were studied. These InP epilayers grown on the porous and standard InP substrates were used to make microwave diodes. We showed the advantages of the diodes made on the porous substrates (over those made on the standard ones) caused by higher structural perfection of the InP epilayers grown on the porous substrates. The work was made in the framework of the
 Russia−Ukraine Program on Nanophysics and Nanoelectronics. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Porous nanostructured InP: technology, properties, application Article published earlier |
| spellingShingle | Porous nanostructured InP: technology, properties, application Arsentyev, I. N. Bobyl, A.B. Konnikov, S.G. Tarasov, I.S. Ulin, V.P Shishkov, M.V. Boltovets, N.S. Ivanov, V.N. Belyaev, A.E. Konakova, R.V. Kudryk, Ya.Ya. Kamalov, A.B. Lytvyn, P.M. Markovskiy, E.P. Milenin, V.V. Red’ko, R.A. |
| title | Porous nanostructured InP: technology, properties, application |
| title_full | Porous nanostructured InP: technology, properties, application |
| title_fullStr | Porous nanostructured InP: technology, properties, application |
| title_full_unstemmed | Porous nanostructured InP: technology, properties, application |
| title_short | Porous nanostructured InP: technology, properties, application |
| title_sort | porous nanostructured inp: technology, properties, application |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121572 |
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