Porous nanostructured InP: technology, properties, application

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2005
• Main Authors: Arsentyev, I. N., Bobyl, A.B., Konnikov, S.G., Tarasov, I.S., Ulin, V.P, Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Belyaev, A.E., Konakova, R.V., Kudryk, Ya.Ya., Kamalov, A.B., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V., Red’ko, R.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121572
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Porous nanostructured InP: technology, properties, application / I. N. Arsentyev, A.B. Bobyl, S.G. Konnikov, I.S. Tarasov, V.P Ulin, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudryk, A.B. Kamalov, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 95-104. — Бібліогр.: 18 назв. — англ.

We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP epilayers grown on them were studied. These InP epilayers grown on the porous and...